MT53E1G32D2FW-046 AAT:A TR

The MT53E1G32D2FW-046 AAT:A TR is a 32 Gbit parallel DRAM device implemented in a mobile LPDDR4X SDRAM architecture. It provides a high-density, volatile memory solution in a compact 200-TFBGA package intended for systems that require LPDDR4X memory technology.

With an operating clock frequency of 2.133 GHz, AEC-Q100 qualification, and an operating temperature range from -40°C to 105°C, this device targets automotive and mobile-grade applications where high capacity, defined electrical characteristics, and extended temperature capability are required.

Key Features

• Core / Memory Architecture 32 Gbit DRAM organized as 1G × 32 using Mobile LPDDR4X SDRAM technology.
• Performance Rated clock frequency of 2.133 GHz with a write cycle time (word page) of 18 ns for predictable timing behavior.
• Power Narrow supply voltage range of 1.06 V to 1.17 V to support stable power delivery and system-level power planning.
• Interface Parallel memory interface for integration into systems designed around parallel DRAM connectivity.
• Package 200-TFBGA package case (10 × 14.5 mm) enabling a compact board footprint for high-density memory integration.
• Temperature & Qualification Automotive grade device with AEC-Q100 qualification and an operating temperature range of -40°C to 105°C.

Typical Applications

• Automotive systems — DRAM capacity and AEC-Q100 qualification support use in automotive electronic modules operating across -40°C to 105°C.
• Mobile devices — Mobile LPDDR4X SDRAM architecture and 2.133 GHz clock frequency suit mobile-oriented memory subsystems.
• Embedded computing — High-density 32 Gbit DRAM in a compact TFBGA package for embedded platforms requiring substantial volatile memory.

Unique Advantages

• AEC-Q100 Qualified: Explicit qualification for automotive-grade reliability and component selection.
• Wide Operating Temperature Range: Rated from -40°C to 105°C to support extended-temperature deployments.
• High Density — 32 Gbit: Large memory capacity in a single device to help meet high-memory requirements without multiple packages.
• High-Frequency Operation: 2.133 GHz clock frequency and 18 ns write cycle time for defined performance characteristics.
• Compact TFBGA Package: 200-TFBGA (10×14.5 mm) package provides a small footprint for space-constrained board designs.
• Tight Supply Voltage Window: 1.06 V–1.17 V supply range supports consistent power budgeting and system design.

Why Choose MT53E1G32D2FW-046 AAT:A TR?

The MT53E1G32D2FW-046 AAT:A TR positions itself as a high-density LPDDR4X parallel DRAM device that combines significant capacity with defined electrical and thermal characteristics. Its AEC-Q100 qualification and wide operating temperature make it suitable for designs that demand automotive-grade robustness alongside mobile-memory architecture.

This device is well suited for engineers specifying memory for applications that require 32 Gbit of volatile storage, predictable timing at 2.133 GHz, and a compact 200-TFBGA footprint. The combination of capacity, qualification, and operating range supports long-term deployment in temperature-challenging and performance-sensitive systems.

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