MT53E1G32D2FW-046 AIT:A TR

The MT53E1G32D2FW-046 AIT:A TR is a 32‑Gbit mobile LPDDR4X DRAM device implemented as 1G × 32 parallel memory. It is a volatile SDRAM optimized for high-density, low-voltage memory applications.

Configured in a 200‑TFBGA (10 × 14.5 mm) package and qualified to AEC‑Q100, this device targets automotive and other systems requiring AEC‑rated, high‑density LPDDR4X memory with a compact package and defined electrical and timing characteristics.

Key Features

• Memory Technology Low‑power mobile SDRAM (LPDDR4X) in a 1G × 32 organization providing 32 Gbit total capacity.
• Performance Supports a clock frequency of 2.133 GHz with a write cycle time (word page) of 18 ns for defined timing behavior.
• Power Operates within a nominal supply range of 1.06 V to 1.17 V for low‑voltage system integration.
• Interface Parallel memory interface suitable for designs requiring standard DRAM access patterns.
• Package Supplied in a 200‑TFBGA package (10 × 14.5 mm) to support compact board layouts and module assembly.
• Qualification and Grade AEC‑Q100 qualified and specified as Automotive grade, supporting applications with automotive qualification requirements.
• Operating Temperature Specified operating range of −40 °C to 95 °C (TC) for wide thermal tolerance in system environments.

Typical Applications

• Automotive systems AEC‑Q100 qualification and automotive grade make this device suitable for in‑vehicle memory needs that require defined qualification and temperature performance.
• Mobile and handheld devices LPDDR4X technology and low operating voltage support compact, power‑sensitive mobile memory implementations.
• Embedded high‑density memory modules 32 Gbit density in a 200‑TFBGA package enables compact embedded designs that require significant DRAM capacity.

Unique Advantages

• AEC‑Q100 qualification: Provides explicit automotive qualification for designs requiring AEC certification.
• High memory density: 32 Gbit capacity in a 1G × 32 configuration reduces PCB area for high‑capacity memory requirements.
• Low‑voltage operation: 1.06 V to 1.17 V supply range supports energy‑conscious system designs.
• High clock capability: 2.133 GHz clock frequency enables high‑rate data transfers where defined LPDDR4X timing is required.
• Compact BGA packaging: 200‑TFBGA (10 × 14.5 mm) package supports dense board integration and module assembly.
• Broad operating temperature: −40 °C to 95 °C (TC) supports use across a wide thermal envelope.

Why Choose IC DRAM 32GBIT PAR 200TFBGA?

The MT53E1G32D2FW-046 AIT:A TR is positioned for designs that require automotive‑qualified, high‑density LPDDR4X DRAM in a compact package. Its combination of 32 Gbit capacity, LPDDR4X technology, low‑voltage operation, and AEC‑Q100 qualification makes it suitable for systems where defined timing, temperature tolerance, and qualification are required.

This device is appropriate for engineers designing automotive and mobile or embedded systems that need scalable memory capacity with predictable electrical and thermal characteristics. The defined specifications support long‑term integration in qualified designs.

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