MT53E1G64D4SQ-046 AAT:A TR

IC DRAM 64GBIT 2.133GHZ WFBGA
Part Description

IC DRAM 64GBIT 2.133GHZ WFBGA

Quantity 1,415 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device PackageN/AMemory FormatDRAMTechnologySDRAM - Mobile LPDDR4
Memory Size64 GbitAccess TimeN/AGradeAutomotive
Clock Frequency2.133 GHzVoltage1.1VMemory TypeVolatile
Operating Temperature-40°C ~ 105°C (TC)Write Cycle Time Word PageN/APackagingN/A
Mounting MethodVolatileMemory InterfaceN/AMemory Organization1G x 64
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unknown
QualificationAEC-Q100ECCNOBSOLETEHTS Code0000.00.0000

Overview of MT53E1G64D4SQ-046 AAT:A TR – IC DRAM 64GBIT 2.133GHZ WFBGA

The MT53E1G64D4SQ-046 AAT:A TR is a 64 Gbit volatile DRAM device implementing Mobile LPDDR4 SDRAM architecture. It delivers a 1G × 64 memory organization and operates at a clock frequency of 2.133 GHz with a 1.1 V supply.

Targeted for automotive-grade applications, this device carries AEC-Q100 qualification and supports an extended operating temperature range from -40°C to 105°C, making it suitable for designs that require high-speed memory with automotive reliability characteristics.

Key Features

  • Memory Technology  Mobile LPDDR4 SDRAM designed for high-speed volatile memory applications.
  • Density & Organization  64 Gbit capacity with a 1G × 64 memory organization for wide data paths and high capacity in a single device.
  • Clock Performance  2.133 GHz clock frequency for high-throughput memory operations.
  • Power  1.1 V supply voltage consistent with LPDDR4 mobile memory power domains.
  • Automotive Grade & Qualification  Grade: Automotive and AEC-Q100 qualification for use in automotive environments.
  • Operating Temperature Range  Rated for -40°C to 105°C (TC) to support extended-temperature deployments.
  • Package  WFBGA package indicated in product name for compact board-level integration.

Typical Applications

  • Automotive Systems  Engineered for automotive-grade designs where AEC-Q100 qualification and extended temperature range are required.
  • Mobile and Embedded Devices  Mobile LPDDR4 technology provides high-speed volatile memory suitable for space-constrained embedded platforms.
  • High-Speed Memory Subsystems  High clock frequency and 1G × 64 organization support high-throughput memory operations in performance-oriented subsystems.

Unique Advantages

  • High Density in a Single Device:  64 Gbit capacity reduces the number of components needed to achieve large memory pools.
  • High-Frequency Operation:  2.133 GHz clocking delivers the throughput required for demanding memory workloads.
  • Automotive Qualification:  AEC-Q100 qualification and Automotive grade designation align the device with automotive reliability requirements.
  • Wide Operating Temperature:  -40°C to 105°C capability supports harsh and variable thermal environments.
  • Low-Voltage Operation:  1.1 V supply aligns with LPDDR4 power domains for efficiency and compatibility with low-voltage systems.

Why Choose IC DRAM 64GBIT 2.133GHZ WFBGA?

The IC DRAM 64GBIT 2.133GHZ WFBGA (MT53E1G64D4SQ-046 AAT:A TR) positions itself as a high-density, high-frequency LPDDR4 solution with automotive-grade qualification and extended temperature tolerance. Its combination of 64 Gbit capacity, 1G × 64 organization, and 2.133 GHz operation makes it suitable for designs that require substantial volatile memory bandwidth and capacity.

This device is appropriate for engineers and procurement teams working on automotive and embedded designs that demand verified qualification, temperature resilience, and LPDDR4 performance characteristics, providing a scalable memory option within an automotive-grade product portfolio.

Request a quote or contact sales to discuss availability, pricing, and lead times for the MT53E1G64D4SQ-046 AAT:A TR.

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