MT53E2G32D4DT-046 AAT:A TR

The MT53E2G32D4DT-046 AAT:A TR is a 64‑Gbit Mobile LPDDR4 SDRAM organized as 2G × 32, engineered for high-speed embedded memory applications. With a 2.133 GHz clock frequency and a 1.1 V supply requirement, it targets designs that require high density and fast DRAM performance.

Designed to operate across an extended temperature range and qualified to AEC‑Q100, this device is positioned for demanding environments where automotive qualification and thermal robustness are required.

Key Features

• Memory Core 64 Gbit capacity in a 2G × 32 organization using Mobile LPDDR4 SDRAM technology for high-density volatile storage.
• Performance 2.133 GHz clock frequency provides high data-rate operation suitable for bandwidth‑sensitive applications.
• Power 1.1 V nominal supply voltage to support reduced core voltages in power‑conscious designs.
• Reliability & Qualification AEC‑Q100 qualification and an operating temperature range of −40 °C to 105 °C for use in thermally demanding and qualified applications.
• Package FBGA format indicated in the product description for compact, board‑level integration.
• Memory Type Volatile DRAM format intended for temporary system memory.

Typical Applications

• Automotive Systems — Memory for electronic control units and infotainment subsystems where AEC‑Q100 qualification and wide temperature range are required.
• Mobile and Embedded Platforms — High‑density LPDDR4 memory for compact systems that need fast, volatile storage at 1.1 V operation.
• Industrial Electronics — Embedded memory in equipment that operates across −40 °C to 105 °C and benefits from qualified components.

Unique Advantages

• High density 64 Gbit capacity: Reduces the need for multiple devices to achieve large memory footprints.
• High data-rate operation: 2.133 GHz clock frequency supports applications with elevated bandwidth demands.
• Automotive qualification: AEC‑Q100 qualification provides traceable assurance for use in automotive and similarly regulated environments.
• Wide operating temperature: −40 °C to 105 °C rating enables use in thermally challenging systems.
• Low-voltage operation: 1.1 V supply supports lower power consumption in system designs where voltage headroom is constrained.
• Compact FBGA packaging: Suited for space‑constrained board layouts requiring high memory density.

Why Choose MT53E2G32D4DT-046 AAT:A TR?

This Mobile LPDDR4 DRAM device combines high density, high clock frequency, and automotive‑grade qualification to serve designs that demand both performance and environmental robustness. Its 64‑Gbit capacity, 2.133 GHz operation, and AEC‑Q100 qualification make it applicable for automotive, mobile, and industrial systems that require qualified high‑speed volatile memory.

The MT53E2G32D4DT-046 AAT:A TR is well suited for engineers specifying dense, fast DRAM in qualified hardware platforms where temperature range and supplier qualification are key selection criteria.

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