MT53E512M64D4HJ-046 AUT:D

The MT53E512M64D4HJ-046 AUT:D is a 32 Gbit volatile DRAM device based on LPDDR4X/LPDDR4 SDRAM architecture with a parallel memory interface and a 512M x 64 organization. It delivers high data-rate operation (2133 MHz clock, 4266 Mb/s data rate per pin) in a compact 556-ball WFBGA package sized 12.4 × 12.4 mm.

Designed for automotive-grade applications, the part combines high-throughput memory channels, low-voltage operation and an extended operating temperature range to support robust embedded memory subsystems where performance and reliability are required.

Key Features

• Memory Core & Architecture LPDDR4X/LPDDR4 SDRAM with 16n prefetch DDR architecture and a 512M x 64 array organization (4 channels × 16 I/O), supporting programmable READ/WRITE latencies and burst lengths.
• Speed & Throughput Speed grade -046 with a 2133 MHz clock and 4266 Mb/s data rate per pin; device timing options include RL/WL settings and BL = 16 or 32.
• Power Domains & Low-Voltage Operation Ultra-low-voltage supplies; documented supply ranges include VDD1 = 1.70–1.95 V (nominal 1.80 V), VDD2 = 1.06–1.17 V (nominal 1.10 V), and VDDQ options including 0.57–0.65 V or 1.06–1.17 V.
• On-Die Features Includes on-chip temperature sensor, programmable output drive strength (DS), programmable ODT termination and directed per-bank refresh for concurrent bank operation and command scheduling.
• Reliability & Qualification AEC-Q100 qualification and an automotive grade designation for systems requiring automotive-level component standards.
• Package & Thermal 556-ball TFBGA/WFBGA package (12.4 × 12.4 mm) designed for board-level mounting; specified operating temperature range: −40°C to 125°C.
• Density & Format 32 Gbit DRAM organized as 512M × 64 with parallel memory interface suited to embedded high-throughput designs.

Typical Applications

• Automotive electronics Automotive-grade volatile memory for in-vehicle systems requiring qualified DRAM solutions.
• Embedded high-performance systems High-bandwidth memory for embedded controllers and subsystems where LPDDR4X architecture and parallel interfaces are used.
• Compact module integration Use in board designs where a 556-ball WFBGA (12.4 × 12.4 mm) package enables space-efficient, high-density memory integration.

Unique Advantages

• Automotive-qualified component: AEC-Q100 qualification and automotive grade designation support use in automotive applications that require component-level qualification.
• High sustained data rates: 2133 MHz clock and 4266 Mb/s per pin data rate deliver the throughput needed for bandwidth-sensitive workloads.
• Low-voltage operation: Multiple low-voltage supply domains (VDD1/VDD2/VDDQ) reduce power consumption while supporting LPDDR4X operation modes.
• Robust thermal range: Specified operation from −40°C to 125°C enables deployment across extended-temperature environments.
• Advanced memory management: Features such as directed per-bank refresh, on-chip temperature sensor and programmable latencies aid system-level performance tuning and reliability.
• Compact, high-density packaging: 556-ball WFBGA (12.4 × 12.4 mm) provides a high-density footprint for space-constrained designs.

Why Choose MT53E512M64D4HJ-046 AUT:D?

The MT53E512M64D4HJ-046 AUT:D pairs LPDDR4X/LPDDR4 high-speed DRAM architecture with automotive-grade qualification and extended temperature operation, offering a combination of throughput, low-voltage efficiency and component-level reliability. Its 32 Gbit density in a 512M × 64 organization, along with programmable timing and on-die management features, makes it suitable for embedded systems that require predictable performance and robust operation.

This device is well suited to designers and procurement teams specifying qualified DRAM for high-bandwidth, space-efficient memory subsystems in automotive and other demanding embedded applications where long-term availability and vendor-backed specifications are important.

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