MTFC4GMTEA-1F WT
| Part Description |
IC FLASH 32GBIT MMC 153WFBGA |
|---|---|
| Quantity | 40 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 153-WFBGA (11.5x13) | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | N/A | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | -25°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 153-WFBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | MMC | Memory Organization | 4G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MTFC4GMTEA-1F WT – IC FLASH 32GBIT MMC 153WFBGA
The MTFC4GMTEA-1F WT is a 32 Gbit non-volatile NAND flash memory device in Micron's e•MMC™ series. It integrates NAND flash storage with an MMC interface in a 153-WFBGA package for compact board-level implementation.
Designed for systems that require removable-style MMC interfacing and onboard flash storage, the device provides 4G × 8 organization, a 2.7 V–3.6 V supply range, and an operating temperature range of −25°C to 85°C for deployment in equipment operating within that thermal window.
Key Features
- Memory Technology NAND flash non-volatile memory with a density of 32 Gbit organized as 4G × 8.
- Interface MMC memory interface compatible with e•MMC™ series implementations for embedded MMC connectivity.
- Voltage Supply Operates from 2.7 V to 3.6 V, supporting systems using standard 3 V power rails.
- Package 153-WFBGA package, supplier device package specified as 153-WFBGA (11.5x13), enabling compact board footprint.
- Operating Temperature Supported ambient temperature range of −25°C to 85°C (TA) for use in environments within that range.
Typical Applications
- Embedded MMC storage: Used as onboard non-volatile storage in designs that utilize an MMC interface for firmware, file systems, or application data.
- Compact electronics: Suitable for compact system designs requiring a BGA-mounted flash device with a small package footprint (153-WFBGA, 11.5x13).
- Systems with 3 V power domains: Applicable where a 2.7 V–3.6 V supply range is required for memory components.
- Temperature-constrained equipment: For equipment operating within −25°C to 85°C, where that specified ambient range is sufficient.
Unique Advantages
- Substantial capacity in a compact package: 32 Gbit density delivered in a 153-WFBGA (11.5x13) footprint minimizes board area for high-capacity designs.
- MMC interface integration: e•MMC™ series MMC interface simplifies integration into MMC-compatible host controllers and firmware stacks.
- Wide supply tolerance: 2.7 V–3.6 V voltage range supports flexibility across common 3 V system power rails.
- Non-volatile NAND storage: NAND flash technology provides persistent data retention for firmware and application storage.
- Defined operating temperature: Specified operation from −25°C to 85°C supports deployment in equipment within that ambient range.
Why Choose MTFC4GMTEA-1F WT?
The MTFC4GMTEA-1F WT positions itself as a straightforward, board-mounted MMC flash solution offering 32 Gbit NAND capacity in a compact 153-WFBGA package. Its MMC interface and 2.7 V–3.6 V supply compatibility make it suitable for designs that require embedded MMC storage without additional external components.
This device is appropriate for engineers and procurement teams specifying onboard flash where the provided capacity, package size, voltage range, and operating temperature window meet design requirements and long-term deployment plans within those specified limits.
Request a quote or contact sales to discuss availability, lead times and to submit a request for this MTFC4GMTEA-1F WT memory device.