NAND256W3A0BN6F TR

The NAND256W3A0BN6F TR is a 256 Mbit parallel NAND flash memory device implemented in a 32M × 8 organization. It delivers non-volatile storage in a 48‑TSOP I package with parallel interface signaling for designs that require byte-wide flash memory.

Key device characteristics include a 50 ns access time, a 50 ns write cycle time for word/page operations, a 2.7 V–3.6 V supply range, and an operating temperature range of -40 °C to 85 °C, making it suitable for a variety of embedded systems and electronic designs requiring defined electrical and thermal specifications.

Key Features

• Core / Memory 256 Mbit NAND flash organized as 32M × 8 provides byte-wide non-volatile storage.
• Performance 50 ns access time and 50 ns write cycle time (word/page) support deterministic read/write timing for system-level memory management.
• Interface Parallel memory interface for straightforward integration with controllers and bus architectures that use byte-wide flash.
• Power Operates from a 2.7 V to 3.6 V supply, accommodating common 3.3 V system rails.
• Package Supplied in a 48‑TSOP I (48‑TFSOP, 0.724" / 18.40 mm width) package for space-efficient PCB mounting.
• Temperature Range Rated for operation from -40 °C to 85 °C (TA), covering standard industrial temperature requirements.

Typical Applications

• Embedded Systems Byte-wide parallel NAND flash for firmware and non-volatile data in embedded controllers and modules.
• Consumer Electronics On-board storage where a compact TSOP package and 256 Mbit density meet device footprint and capacity needs.
• Industrial Equipment Non‑volatile memory for equipment requiring an operating range down to -40 °C and up to 85 °C.

Unique Advantages

• Defined Timing Performance: 50 ns access and write cycle times provide clear timing margins for system design and memory management.
• Compact TSOP Footprint: 48‑TSOP I package (0.724", 18.40 mm width) minimizes PCB area while supporting required pinout for parallel operation.
• <strong-Wide Supply Range: 2.7 V–3.6 V operation supports common 3.3 V systems and allows flexible power-supply design.
• Industry Temperature Range: -40 °C to 85 °C rating enables deployment across a range of environmental conditions.
• Byte-Wide Organization: 32M × 8 memory organization simplifies data path integration with 8-bit buses and controllers.

Why Choose NAND256W3A0BN6F TR?

The NAND256W3A0BN6F TR positions itself as a straightforward, specification-driven parallel NAND flash option for designs that require 256 Mbit of byte-wide non-volatile storage in a compact 48‑TSOP I package. Its defined access and write timing, standard 2.7 V–3.6 V supply range, and -40 °C to 85 °C operating range provide predictable electrical and thermal boundaries for integration into embedded, consumer, and industrial systems.

This device is suitable for designers seeking a clear set of performance and mechanical parameters—density, timing, package, interface, voltage and temperature—without extrapolating beyond the provided specifications.

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