NAND512R3A2SN6E

The NAND512R3A2SN6E is a 512 Mbit non-volatile NAND flash memory device organized as 64M x 8 with a parallel memory interface. It provides 50 ns access and 50 ns write cycle timings in a compact 48-TSOP I package, and operates over a supply range of 1.7 V to 1.95 V.

This device is intended for systems that require parallel NAND flash storage with defined timing, compact PCB footprint, and support for extended ambient temperatures from -40°C to 85°C (TA).

Key Features

• Memory 512 Mbit capacity organized as 64M x 8, delivering non-volatile storage in a single device.
• Technology NAND flash memory technology providing persistent data retention without external power.
• Performance 50 ns access time and 50 ns write cycle time (word/page) for deterministic read/write timing.
• Interface & Organization Parallel memory interface and 8-bit organization (64M x 8) for compatibility with parallel memory controllers.
• Power Low-voltage operation with a supply range of 1.7 V to 1.95 V for designs targeting reduced voltage rails.
• Package & Mounting 48-TSOP I (48-TFSOP, 0.724" / 18.40 mm width) small-outline package for space-constrained board layouts.
• Operating Temperature Specified ambient operating range of -40°C to 85°C (TA) for deployment across a wide thermal envelope.

Typical Applications

• Embedded storage — Firmware and data storage in embedded systems requiring parallel NAND flash memory.
• Consumer electronics — Devices that integrate compact parallel NAND memory in space-constrained board designs.
• Industrial equipment — Systems operating across -40°C to 85°C that need non-volatile NAND storage with defined timing.

Unique Advantages

• High-density non-volatile storage: 512 Mbit capacity in a single 64M x 8 device reduces component count for moderate-capacity storage needs.
• Deterministic performance: 50 ns access and 50 ns write cycle timings provide consistent read/write behavior for system timing considerations.
• Low-voltage operation: 1.7 V to 1.95 V supply enables integration with lower-voltage power domains.
• Compact TSOP footprint: 48-TSOP I package (0.724", 18.40 mm width) supports compact PCB implementations.
• Wide ambient temperature range: -40°C to 85°C (TA) supports deployment in environments with significant temperature variation.
• Parallel interface: 8-bit parallel organization simplifies integration with parallel memory controllers and legacy interfaces.

Why Choose NAND512R3A2SN6E?

The NAND512R3A2SN6E from Micron Technology Inc. is positioned for designs that require a mid-density, parallel NAND flash memory with defined access and write timings, low-voltage operation, and a compact TSOP package. Its combination of 512 Mbit capacity, 50 ns timing, and -40°C to 85°C operating range suits applications where predictable performance and a small PCB footprint are priorities.

This device is appropriate for engineers specifying parallel NAND storage in embedded, consumer, or industrial boards that match the stated electrical, timing, and thermal conditions.

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