W25N512GVEIG TR

The W25N512GVEIG TR is a 3V, 512 M-bit serial SLC NAND flash memory device implementing Dual/Quad SPI with buffer read and continuous read modes. It provides non-volatile, byte-addressable storage organized as 64M x 8 and is intended for systems that require serial flash storage accessible via SPI or Quad I/O.

With a 2.7 V to 3.6 V supply range, support for standard/dual/quad SPI instructions, and on-die protection and configuration registers, the device targets designs needing robust serial flash functions including read, program and erase operations at a 166 MHz clock capability.

Key Features

• Memory Type & Capacity 512 Mbit SLC NAND flash organized as 64M x 8 for non-volatile data and code storage.
• Interface SPI — Quad I/O support with Dual/Quad SPI instructions and standard SPI compatibility for flexible host interfacing.
• Read Modes Buffer Read and Continuous Read modes are supported to optimize sequential data transfers.
• Performance Device supports up to 166 MHz clock frequency with an access time specified at 6 ns for read operations.
• Program/Erase Timing Write cycle time (word/page) specified at 700 µs; instruction set includes page program, quad load program, and 128KB block erase commands.
• Voltage & Temperature Range Operates from 2.7 V to 3.6 V and is specified for an ambient temperature range of −40 °C to 85 °C.
• Protection & Configuration Volatile writable protection and configuration registers with OTP-lockable bits (block protect, WP-E, SRP bits), ECC enable bit, and status registers for program/erase and ECC reporting.
• Package Available in an 8-WSON (8x6) exposed pad package (8-WDFN style) for compact PCB footprint and thermal/power handling.

Typical Applications

• Non-volatile storage — 512 Mbit serial SLC NAND FLASH provides storage for system data and assets accessible via SPI/Quad I/O.
• Boot and code shadowing — Dual/Quad SPI and buffer/continuous read modes enable serial execution and fast code retrieval where supported.
• Data logging and file storage — Page program and block erase commands allow managed write/erase cycles for recorded data storage.

Unique Advantages

• Serial SLC NAND in a compact package: 512 Mbit capacity in an 8-WSON (8x6) package reduces PCB area while providing high-density non-volatile storage.
• Flexible SPI performance: Dual and Quad SPI support plus buffer/continuous read modes enable higher-throughput serial transfers when required.
• Wide operating range: 2.7 V to 3.6 V supply and −40 °C to 85 °C ambient rating accommodate a range of host systems and environments.
• Configurable protection and ECC: Protection and configuration registers include OTP-lockable bits and an ECC enable option with cumulative ECC status reporting for managed data integrity.
• Comprehensive instruction set: Includes device reset, JEDEC ID, read, program (including quad load program), and 128KB block erase commands for full flash management.

Why Choose IC FLASH 512MBIT SPI/QUAD 8WSON?

The W25N512GVEIG TR delivers a verified 512 Mbit SLC NAND flash solution with Dual/Quad SPI connectivity, buffer and continuous read modes, and on-chip protection/configuration controls. Its combination of serial interface flexibility, 166 MHz clock capability, and SLC NAND organization makes it suitable for system designs that require compact, non-volatile storage with configurable protection and ECC support.

This device is well suited to designers looking for a high-density, SPI-accessible flash memory in a small 8-WSON package and for applications that require documented instruction support for read, program and erase operations along with writable and OTP-lockable protection registers.

Request a quote or submit an inquiry for pricing, availability and lead-time information to proceed with evaluation or volume sourcing of the W25N512GVEIG TR.