W25N512GVFIG TR

IC FLASH 512MBIT SPI/QUAD 16SOIC
Part Description

IC FLASH 512MBIT SPI/QUAD 16SOIC

Quantity 81 Available (as of May 6, 2026)
Product CategoryMemory
ManufacturerWinbond Electronics
Manufacturing StatusActive
Manufacturer Standard Lead Time24 Weeks
Datasheet

Specifications & Environmental

Device Package16-SOICMemory FormatFLASHTechnologyFLASH - NAND (SLC)
Memory Size512 MbitAccess Time6 nsGradeIndustrial
Clock Frequency166 MHzVoltage2.7V ~ 3.6VMemory TypeNon-Volatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word Page700 μsPackaging16-SOIC (0.295", 7.50mm Width)
Mounting MethodNon-VolatileMemory InterfaceSPI - Quad I/OMemory Organization64M x 8
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCN3A991B1AHTS Code8542.32.0071

Overview of W25N512GVFIG TR – IC FLASH 512MBIT SPI/QUAD 16SOIC

The W25N512GVFIG TR is a 3.0V, 512 Mbit serial SLC NAND flash memory from Winbond Electronics, implemented with Dual/Quad SPI interfaces. It provides high-density, non-volatile storage organized as 64M × 8 with support for buffer read and continuous read modes.

Engineered for systems that require compact serial flash memory, the device offers selectable Dual/Quad SPI I/O, a clock frequency up to 166 MHz, and a broad supply range of 2.7 V to 3.6 V, all in a standard 16-SOIC package.

Key Features

  • Memory Type 512 Mbit serial SLC NAND flash memory organized as 64M × 8 for high-density non-volatile storage.
  • Interface SPI with Dual and Quad I/O support for flexible serial connectivity and higher throughput modes.
  • Performance Supports a clock frequency up to 166 MHz and an access time of 6 ns; includes buffer read and continuous read modes to optimize data transfer.
  • Program/Erase and Write Timing Page/word program write cycle time specified at 700 µs.
  • Supply and Operating Conditions Single supply range from 2.7 V to 3.6 V and an operating temperature range of −40 °C to 85 °C (TA).
  • Data Integrity and Control On-chip configuration and status registers include ECC enable control and protection/register features as documented in the device instruction set.
  • Package Available in a 16‑pin SOIC package (0.295", 7.50 mm width) for space-efficient PCB implementation.

Typical Applications

  • Embedded Non-Volatile Storage – Used where 512 Mbit serial SLC NAND flash is required for firmware, code storage, or data retention.
  • Systems Requiring High-Speed Serial I/O – Dual/Quad SPI and up to 166 MHz clocking support faster serial data transfers in compact designs.
  • Industrial and Commercial Electronics – Operates across −40 °C to 85 °C and a 2.7 V–3.6 V supply window to fit a range of system power and thermal conditions.

Unique Advantages

  • High-Density SLC NAND – 512 Mbit capacity in a 64M × 8 organization provides large non-volatile storage in a small footprint.
  • Flexible High-Speed I/O – Dual and Quad SPI modes plus buffer/continuous read support enable scalable throughput based on system needs.
  • Wide Supply Range – 2.7 V to 3.6 V operation supports common 3V system rails without additional power management.
  • Extended Operating Temperature – Specified −40 °C to 85 °C rating suitable for a broad set of operating environments.
  • Compact Standard Package – 16‑SOIC package simplifies PCB layout while keeping pinout and assembly straightforward.
  • On-Chip Control and Protection – Configuration and status registers, including ECC enable and protection bits, provide programmable data management and status reporting.

Why Choose IC FLASH 512MBIT SPI/QUAD 16SOIC?

The W25N512GVFIG TR positions itself as a 3V, 512 Mbit serial SLC NAND flash solution delivering high-density storage with Dual/Quad SPI flexibility and performance up to 166 MHz. Its documented features—buffer/continuous read modes, ECC control bits, and defined timing characteristics—make it suitable for designs that require verifiable serial flash behavior in a compact 16‑SOIC package.

From Winbond Electronics, this device is appropriate for engineers specifying non-volatile memory where capacity, configurable serial I/O modes, supply-range compatibility (2.7 V–3.6 V), and an extended temperature window (−40 °C to 85 °C) are required for system-level integration.

If you would like pricing or availability details, request a quote or submit an inquiry to receive more information about the W25N512GVFIG TR and its suitability for your design needs.

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