W25N512GVFIR TR

The W25N512GVFIR TR is a 512 M-bit serial SLC NAND flash memory device featuring Dual/Quad SPI interfaces and support for buffer read and continuous read modes. It implements a 64M x 8 memory organization and is offered in a 16-SOIC (0.295", 7.50 mm width) package.

Designed for 3.0 V systems, the device operates across a 2.7 V to 3.6 V supply range, supports serial clock operation up to 166 MHz, and provides a 6 ns access time with a 700 µs word/page program cycle. Operating temperature is specified from −40 °C to 85 °C.

Key Features

• Memory and Technology 512 Mbit SLC NAND flash organized as 64M × 8 for non-volatile data storage.
• Interface and Performance SPI interface with Dual/Quad I/O support and a maximum serial clock of 166 MHz; access time specified at 6 ns.
• Read Modes Supports buffer read and continuous read modes as documented in the device instruction set (Dual/Quad SPI instructions included).
• Program/Erase Characteristics Page program (word/page) write cycle time is specified at 700 µs; supports standard NAND program and erase instruction set entries in the datasheet.
• Power and Voltage Single-supply operation from 2.7 V to 3.6 V, specified as a 3 V serial NAND flash device.
• Package and Temperature Available in a 16-SOIC (0.295", 7.50 mm width) package with an ambient operating temperature range of −40 °C to 85 °C.
• Device Management and Status On-chip status/configuration registers and protection features (including volatile/OTP-lockable bits and ECC/status reporting) are provided per the datasheet.

Unique Advantages

• High-density serial storage: 512 Mbit SLC NAND in a single 16-SOIC package provides substantial non-volatile capacity while maintaining a compact footprint.
• Flexible high-speed I/O: Dual and Quad SPI modes plus a 166 MHz clock option support higher throughput over a serial interface where pin count is constrained.
• Read mode flexibility: Buffer read and continuous read modes enable contiguous data throughput patterns defined in the instruction set for predictable read behavior.
• Programmable protection and status reporting: Multiple protection and status registers (including OTP-lockable bits and ECC status indicators) allow firmware-level control over memory protection and error reporting.
• Broad operating range: 2.7 V–3.6 V supply and −40 °C to 85 °C operating temperature support a wide range of 3 V embedded environments.

Why Choose IC FLASH 512MBIT SPI/QUAD 16SOIC?

The W25N512GVFIR TR positions itself as a high-density serial SLC NAND flash memory option with Dual/Quad SPI support and on-die features for status, protection, and ECC reporting. Its combination of 512 Mbit capacity, up to 166 MHz serial clock capability, and read-mode flexibility provides a compact, capable storage element for designs requiring non-volatile serial memory in a 16-SOIC footprint.

This device is suited to designs that need a verified SLC NAND architecture, deterministic program timing (700 µs page/word program cycle), and explicit configuration/status controls as documented in the datasheet. The supported voltage range and industrial temperature rating contribute to long-term deployability in 3 V systems that match the device specifications.

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