W9751G8KB25I

The W9751G8KB25I from Winbond Electronics is a 512 Mbit DDR2 SDRAM device organized as 64M × 8 with a parallel memory interface. It is provided in a 60-TFBGA / 60-WBGA (8 × 12.5 mm) package and is a volatile DRAM solution.

This device targets systems that require DDR2 parallel memory operation at a 400 MHz clock frequency, with a supply voltage range of 1.7 V to 1.9 V and an operating temperature window of −40°C to 95°C. The W9751G8KB25I includes standard DDR2 features and detailed command/timing behavior for system integration.

Key Features

• Memory Core — DDR2 SDRAM technology; volatile memory with a density of 512 Mbit organized as 64M × 8.
• Performance — Designed for 400 MHz clocking; access time specified at 57.5 ns and write cycle time (word page) of 15 ns.
• Voltage and Power — Operates from 1.7 V to 1.9 V supply, matching DDR2 nominal operating range.
• Temperature Range — Specified operating temperature from −40°C to 95°C (TC) for wide thermal environments.
• Interface and Control — Parallel memory interface with standard DDR2 command set; datasheet details Mode Register and Extended Mode Register operations including ODT and DLL control.
• DRAM Operations — Supports DDR2 command functions described in the datasheet such as refresh, self-refresh, power-down, burst read/write and auto-precharge.
• Package — 60-TFBGA / 60-WBGA package (8 × 12.5 mm) for board-level mounting and compact footprint.

Typical Applications

• DDR2 Parallel Memory Expansion — For systems that require a 512 Mbit parallel DDR2 DRAM device with 64M × 8 organization.
• Compact Board-Level Memory — Suited to designs needing a compact BGA memory package (60-WBGA, 8 × 12.5 mm) to save PCB area.
• High-Temperature Systems — For equipment and modules that must maintain DDR2 memory operation across −40°C to 95°C.
• Legacy DDR2 Platforms — For integration into existing boards or platforms designed around parallel DDR2 memory interfaces and command sets.

Unique Advantages

• Right-sized capacity for mid-density designs: 512 Mbit (64M × 8) provides moderate DRAM density for a range of DDR2 applications.
• Deterministic DDR2 timing: 400 MHz clock rating, 57.5 ns access time and 15 ns write cycle time give defined timing parameters for system designers.
• Flexible power window: 1.7 V to 1.9 V supply simplifies integration with DDR2 power rails.
• Compact BGA footprint: 60-WBGA (8 × 12.5 mm) package enables board area optimization while providing standard BGA mounting.
• Extended operating temperature: −40°C to 95°C rating supports deployment in thermally demanding environments.
• Comprehensive DDR2 control features: Mode Register and Extended Mode Register support, ODT and DLL controls allow memory behavior tuning per system requirements.

Why Choose W9751G8KB25I?

The W9751G8KB25I positions itself as a practical DDR2 SDRAM option for designs that require a 512 Mbit parallel memory device with defined timing and control features. Its combination of 400 MHz operation, 1.7–1.9 V supply range, and extended −40°C to 95°C operating range make it suitable for systems that need consistent DDR2 behavior in compact board footprints.

Detailed device documentation covers command sets, timing, mode registers and operational sequences to support integration and validation. Choose the W9751G8KB25I when a documented, mid-density DDR2 parallel DRAM in a space-efficient BGA package is required for your system design.

Request a quote or submit an inquiry to receive pricing, lead-time and technical information for the W9751G8KB25I.