W9812G6JB-6 TR

The W9812G6JB-6 TR is a 128 Mbit synchronous DRAM (SDRAM) device organized as 2M × 4 banks × 16 bits (8M × 16). It implements parallel SDRAM architecture and is specified for operation up to 166 MHz (‑6 speed grade) with a CAS latency class referenced in the datasheet.

Designed for high-speed synchronous memory applications, this part provides standard SDRAM functional modes such as burst read/write, auto-precharge, self-refresh and power-down, packaged in a 54‑TFBGA (8×8) footprint with a 3.0 V to 3.6 V supply range and an operating temperature range of 0°C to 70°C (TA).

Key Features

• Core Memory Organization  Organized as 2M × 4 banks × 16 bits (8M × 16) to deliver a total density of 128 Mbit.
• SDRAM Technology  Synchronous DRAM architecture with standard SDRAM command set and burst operation modes for sequential data transfers.
• Performance  Rated for up to 166 MHz operation for the -6 speed grade with an access time of 5 ns as indicated in the specifications.
• Supported Functional Modes  Includes power-up and initialization, mode register set, bank activate, burst read/write, auto-precharge, precharge, self-refresh and power-down modes (per datasheet functional descriptions).
• Parallel Memory Interface  Standard parallel SDRAM interface suitable for parallel memory system designs.
• Power  Operating supply voltage range of 3.0 V to 3.6 V.
• Package  54‑TFBGA package (8×8) for compact board-level integration.
• Temperature Range  Specified operating ambient temperature: 0°C to 70°C (TA).

Unique Advantages

• Compact BGA footprint: The 54‑TFBGA (8×8) package enables dense PCB placement while providing the pinout required for parallel SDRAM implementations.
• High-frequency capability: Compliance to the -6 speed grade supports 166 MHz operation, enabling higher bandwidth memory transfers where required.
• Standard SDRAM feature set: Built-in support for burst read/write, auto-precharge, self-refresh and power-down simplifies memory controller integration and common memory management tasks.
• Mid-range density: 128 Mbit capacity in a single device supports moderate memory density requirements without multi-device complexity.
• Wide supply tolerance: 3.0 V to 3.6 V supply range accommodates designs using standard 3.3 V systems.

Why Choose W9812G6JB-6 TR?

The W9812G6JB-6 TR provides a compact 128 Mbit SDRAM solution with a parallel interface and standard SDRAM feature set, making it suitable for designs that require synchronous burst transfers, self-refresh capability and standard command-based memory control. Its 166 MHz-rated speed grade and 5 ns access metric align it with applications needing moderate throughput in a small BGA package.

With a defined operating voltage range (3.0 V–3.6 V) and ambient temperature window (0°C–70°C), this device fits system designs that match those electrical and thermal envelopes and where the 54‑TFBGA mounting is desired for board-level integration.

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