W9812G6KH-5

The W9812G6KH-5 from Winbond Electronics is a 128 Mbit synchronous DRAM (SDRAM) device organized as 2M × 4 banks × 16 bits (8M × 16). It implements high-speed SDRAM architecture delivering up to 200 MHz clock operation and is provided in a 54‑TSOP II package.

This device is suited for designs that require a volatile SDRAM memory block with LVTTL interface and standard SDRAM command/burst functionality. Key values include industry-oriented performance at 200 MHz, a compact 54‑TSOP footprint, and a 3.0–3.6 V supply range.

Key Features

• Core & Architecture  Organized as 2M × 4 banks × 16 bits (8M × 16) supporting standard SDRAM banked architecture and command set.
• Memory Capacity  128 Mbit DRAM memory size with 16‑bit data width.
• Performance  Rated for up to 200 MHz clock frequency (‑5 speed grade) and supporting the specified SDRAM timing modes including burst read/write and CAS latency options.
• Access Timing  Typical access timing listed as 4.5 ns (AC characteristics and timing diagrams available in the datasheet).
• Interface  LVTTL-compatible memory interface signaling for control and data lines.
• Power  Supply voltage range of 3.0 V to 3.6 V suitable for standard 3 V SDRAM systems.
• Package & Mounting  54‑TSOP II (0.400", 10.16 mm width) surface-mount package for compact board layouts.
• Operating Temperature  Commercial temperature range: 0 °C to 70 °C (TA).
• SDRAM Functionality  Supports standard SDRAM features documented in the datasheet such as auto-precharge, self-refresh, power-down modes, burst operations, and mode register programming.

Typical Applications

• Personal computer and industrial memory modules  Suitable for designs aligned with personal computer industrial standards as referenced in the device documentation.
• Embedded systems  Provides a 128 Mbit SDRAM block with LVTTL interface for embedded platforms requiring standard SDRAM timing and burst access.
• Consumer and electronics products  Used where a moderate-density synchronous DRAM is required in a compact TSOP footprint.

Unique Advantages

• 200 MHz rated operation: Delivers high-speed synchronous operation (‑5 grade) for systems targeting 200 MHz SDRAM performance.
• Banked SDRAM architecture: 2M × 4 banks × 16‑bit organization enables flexible burst and interleaved access patterns defined in the datasheet.
• Standard LVTTL interface: Simplifies integration with LVTTL-compatible controllers and legacy interfaces.
• Wide supply tolerance: 3.0–3.6 V supply range supports typical 3 V SDRAM power domains.
• Compact 54‑TSOP II package: Surface-mount TSOP II package (10.16 mm width) for space-constrained PCB layouts.
• Complete SDRAM command set and modes: On-die support for auto-refresh, self-refresh, power-down, and burst operations as detailed in the datasheet.

Why Choose W9812G6KH-5?

The W9812G6KH-5 provides a clearly specified 128 Mbit SDRAM solution with up to 200 MHz operation, industry-aligned SDRAM feature set, and a compact 54‑TSOP II package. Its LVTTL interface and 3.0–3.6 V supply range allow integration into systems that require standard SDRAM behavior and timing.

This device is appropriate for designers and procurement teams seeking a vendor-documented SDRAM building block for PC-oriented and embedded applications where the stated performance, package, and operating conditions match system requirements. Full electrical and timing specifications are provided in the manufacturer datasheet to support design and validation.

Request a quote or submit a purchase inquiry to evaluate W9812G6KH-5 for your next design project.