W9825G6JH-6 TR

The W9825G6JH-6 TR is a 256 Mbit synchronous dynamic RAM (SDRAM) device from Winbond Electronics. It is organized as 4M × 4 banks × 16 bits (equivalent to 16M × 16) and implements a parallel SDRAM interface for board-level memory subsystems.

Designed and offered in speed-grade -6, this part is compliant with the -6 specification (166 MHz/CL3 or 133 MHz/CL2). The device targets applications that require a 256 Mbit density in a 54-lead TSOP II footprint while supporting standard SDRAM command sets and power modes.

Key Features

• Core Architecture Synchronous DRAM organized as 4M × 4 banks × 16 bits (16M × 16 logical organization) to provide 256 Mbit memory capacity.
• Performance Rated for 166 MHz operation in the -6 speed grade with an access time of 5 ns; supports standard SDRAM timing modes including CAS latency configurations.
• Memory Interface & Operation Parallel SDRAM interface with support for burst read/write, auto-precharge, self-refresh and power-down commands as detailed in the device functional description.
• Power Operates from a 3.0 V to 3.6 V supply range.
• Package 54-lead TSOP II (0.400" / 10.16 mm width) for compact board-level integration.
• Environmental Range Commercial operating temperature range of 0°C to 70°C (TA).

Typical Applications

• Personal computer memory subsystems Speed-grade sorting and timing options make the device suitable for designs following personal computer SDRAM specifications.
• Board-level memory modules 256 Mbit density and TSOP II package support compact module and board implementations with a parallel SDRAM interface.
• Embedded systems requiring parallel SDRAM Standard SDRAM command support (burst operations, self-refresh, power down) enables integration in systems that require defined memory control sequences.

Unique Advantages

• Standard SDRAM command support: Enables burst read/write, auto-precharge, self-refresh and power-down modes for flexible memory control and power management.
• Speed-grade alignment: The -6 grade provides 166 MHz/CL3 or 133 MHz/CL2 timing compatibility, simplifying selection for designs targeting those timing points.
• Compact TSOP II footprint: 54-lead TSOP II package (0.400" / 10.16 mm) conserves board space while providing full parallel SDRAM connectivity.
• Clear voltage and thermal limits: 3.0–3.6 V supply range and 0°C–70°C operating temperature make the device specification straightforward for system power and thermal planning.
• Deterministic organization: 4M × 4 banks × 16 bits organization (16M × 16) provides a well-defined memory map for address and timing design.

Why Choose W9825G6JH-6 TR?

The W9825G6JH-6 TR offers a compact, parallel SDRAM solution delivering 256 Mbit density with defined timing behavior (166 MHz/CL3 or 133 MHz/CL2 for the -6 grade). Its standard SDRAM feature set—burst operations, auto-precharge, self-refresh and power-down—coupled with a 54-TSOP II package makes it suitable for designers needing a board-level SDRAM device with clear electrical and timing specifications.

Supplied by Winbond Electronics and documented in a detailed datasheet, the device is intended for designs that require explicit timing control, straightforward power requirements (3.0–3.6 V), and a commercial operating temperature range (0°C–70°C).

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