AS4C16M16D1-5BCNTR

IC DRAM 256MBIT PAR 60TFBGA
Part Description

IC DRAM 256MBIT PAR 60TFBGA

Quantity 1,532 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerAlliance Memory, Inc.
Manufacturing StatusActive
Manufacturer Standard Lead Time20 Weeks
Datasheet

Specifications & Environmental

Device Package60-TFBGA (8x13)Memory FormatDRAMTechnologySDRAM - DDR
Memory Size256 MbitAccess Time700 psGradeCommercial
Clock Frequency200 MHzVoltage2.3V ~ 2.7VMemory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word Page15 nsPackaging60-TFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization16M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0024

Overview of AS4C16M16D1-5BCNTR - 256Mbit DDR SDRAM in 60-TFBGA Package

The AS4C16M16D1-5BCNTR from Alliance Memory is a 256-megabit DDR SDRAM device organized as 16M x 16 bits. This volatile memory solution delivers high-speed parallel data access with a 200MHz clock frequency and 7ns access time, making it ideal for applications requiring fast synchronous memory operations. The compact 60-TFBGA package (8x13mm) provides a space-efficient footprint for embedded systems and cost-sensitive designs.

Key Features

  • High-Speed DDR SDRAM Core - 200MHz clock operation with 7ns access time enables rapid data throughput for bandwidth-intensive applications, supporting double data rate transfers for improved performance over standard SDRAM.
  • Flexible Memory Organization - 16M x 16-bit architecture provides 256Mbit total capacity with 16-bit parallel interface, allowing efficient data bus utilization and straightforward integration into existing memory subsystems.
  • Compact TFBGA Packaging - 60-pin Thin Fine-pitch Ball Grid Array in 8x13mm footprint reduces board space requirements while maintaining reliable connectivity for high-density designs.
  • Standard DDR Operating Voltage - 2.3V to 2.7V supply voltage range supports conventional DDR SDRAM power requirements, simplifying power supply design and ensuring compatibility with standard logic levels.
  • Commercial Temperature Range - Operates from 0°C to 70°C (TA), providing reliable performance across typical commercial and consumer product environments.

Typical Applications

  • Consumer Electronics - This DDR SDRAM provides cost-effective memory for set-top boxes, digital TVs, and home entertainment systems where the 256Mbit capacity and 200MHz speed support video buffering and user interface operations at an attractive price point.
  • Networking Equipment - The parallel interface and fast access time make this memory suitable for routers, switches, and network appliances that require packet buffering and routing table storage with consistent low-latency performance.
  • Embedded Computing - Commercial-grade temperature tolerance and compact BGA package enable integration into embedded controllers, point-of-sale terminals, and industrial HMIs where moderate memory capacity meets system requirements without over-specification.
  • Automotive Infotainment - The device serves as main memory for navigation systems, dashboard displays, and multimedia controllers operating within the commercial temperature range, providing the bandwidth needed for graphics and data processing tasks.
  • Telecommunications - This SDRAM supports data buffering and processing in telecom infrastructure equipment such as base stations and access points where the parallel interface simplifies integration with existing processor architectures.

Unique Advantages

  • Proven DDR Technology: Leverages mature DDR SDRAM architecture with broad ecosystem support, reducing design risk and simplifying sourcing of compatible controllers and reference designs.
  • Space-Efficient Footprint: The 60-TFBGA package delivers high pin density in minimal board area, enabling compact product designs and freeing space for additional functionality.
  • Cost-Optimized Capacity: 256Mbit density hits the sweet spot for many embedded and consumer applications, avoiding the cost premium of higher-capacity devices while meeting actual memory requirements.
  • Parallel Interface Simplicity: Direct parallel connection eliminates the complexity and latency of serial memory protocols, streamlining processor integration and reducing software overhead.
  • Active Lifecycle Status: Current production availability ensures long-term supply continuity for new designs and ongoing manufacturing, minimizing obsolescence risk.
  • 15ns Write Cycle Time: Fast write operations support applications with frequent memory updates, ensuring sustained system performance during intensive read-write workloads.

Why Choose AS4C16M16D1-5BCNTR?

The AS4C16M16D1-5BCNTR offers a balanced combination of capacity, speed, and form factor for mainstream embedded and consumer applications. Its 200MHz DDR SDRAM core provides ample bandwidth for graphics buffering, data processing, and system memory tasks, while the compact TFBGA package supports modern high-density board layouts. Alliance Memory's active production status ensures reliable availability for both prototyping and volume manufacturing.

This device is particularly well-suited for designs targeting commercial operating environments where the 0°C to 70°C range covers typical deployment conditions. The standard DDR interface and voltage levels facilitate integration with a wide range of processors and controllers, while the 256Mbit capacity addresses common memory footprint requirements without unnecessary cost or complexity.

Get a Quote

Contact our sales team to request pricing and availability for the AS4C16M16D1-5BCNTR. Our technical support staff can assist with integration guidance, reference designs, and volume supply arrangements tailored to your project requirements.

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