AS4C2M32S-5TCNTR

The AS4C2M32S-5TCNTR is a 64 Mbit synchronous DRAM (SDRAM) organized as 2M × 32 with an internal pipelined architecture and four internal banks. It provides fully synchronous, burst-oriented read and write operation with programmable modes to support a range of burst lengths and access patterns.

Designed for systems that require high memory bandwidth and deterministic synchronous operation, this device targets commercial-temperature applications operating at up to a 200 MHz clock frequency while operating from a single +3.3 V supply.

Key Features

• Memory Capacity & Organization 64 Mbit total capacity configured internally as quad 512K × 32-bit banks (2048 rows × 256 columns × 32 bits per bank).
• Performance Supports a 200 MHz clock rate with a maximum access time of 5.5 ns and selectable CAS latency of 2 or 3.
• Burst and Mode Flexibility Programmable burst lengths of 1, 2, 4, 8 or full page, burst type selectable as sequential or interleaved, and burst-stop and auto precharge options.
• Interface and Control Fully synchronous parallel interface with LVTTL signaling and individual byte control via DQM0–DQM3; supports burst-read and single-write modes.
• Refresh and Reliability Supports Auto Refresh and Self Refresh with 4096 refresh cycles/64 ms to maintain data integrity in volatile operation.
• Power and Voltage Single-supply operation at +3.3 V ±0.3 V (specified 3.0 V to 3.6 V).
• Package and Temperature 86-pin TSOP II (0.50 mm pitch) package with commercial operating temperature range 0 °C to 70 °C; part number suffix indicates Pb and Halogen Free when present.

Typical Applications

• High-bandwidth memory subsystems — For designs that require synchronous, burst-oriented DRAM access and predictable timing behavior.
• Communication and networking equipment — As a buffer or temporary data store where pipelined, banked access and refresh support are required.
• Embedded systems with parallel SDRAM interfaces — For commercial-temperature embedded designs that need a 64 Mbit SDRAM operating up to 200 MHz.

Unique Advantages

• Quad-bank, pipelined architecture: Enables concurrent bank operations and efficient burst transfers to maximize throughput for burst-oriented workloads.
• Programmable burst and mode options: Flexible burst lengths and CAS latency settings allow tuning for latency versus throughput trade-offs in system designs.
• Byte-level data masking: Individual DQM0–DQM3 control provides byte-wise write masking and data integrity control for partial-word operations.
• Synchronous LVTTL interface: All signals registered on clock edge for predictable timing and simple integration into synchronous system buses.
• Standard TSOP II package: 86-pin TSOP II footprint (0.50 mm pitch) simplifies board-level integration for compact commercial designs.

Why Choose AS4C2M32S-5TCNTR?

The AS4C2M32S-5TCNTR offers a compact, commercially rated SDRAM solution delivering 64 Mbit capacity with a 200 MHz synchronous interface and programmable burst behavior. Its quad-bank, pipelined architecture and byte-level control make it suitable for systems that need predictable, high-bandwidth memory transfers.

This device is appropriate for engineers building commercial-temperature embedded and communication systems that require a standard TSOP II package, +3.3 V single-supply operation, and flexible burst/mode configuration to match system timing and throughput requirements.

Request a quote or submit an RFQ to check availability and pricing for the AS4C2M32S-5TCNTR and to discuss lead times and volume options.