AS4C2M32SA-6TCN
| Part Description |
IC DRAM 64MBIT PAR 86TSOP II |
|---|---|
| Quantity | 32 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Alliance Memory, Inc. |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 20 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 86-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Mbit | Access Time | 5.5 ns | Grade | Commercial | ||
| Clock Frequency | 166 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | 2 ns | Packaging | 86-TFSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 2M x 32 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0002 |
Overview of IC DRAM 64MBIT PAR 86TSOP II – 64 Mbit Parallel SDRAM (2M × 32)
The IC DRAM 64MBIT PAR 86TSOP II is a 64‑Mbit parallel SDRAM organized as 2M × 32. It provides synchronous DRAM memory in a compact 86‑TSOP II package for systems that require a mid‑density parallel memory solution.
Key characteristics include a 166 MHz clock capability, 5.5 ns access time, a 3.0–3.6 V supply range, and a commercial operating temperature range of 0°C to 70°C—features that support integration into designs requiring deterministic parallel memory interfacing.
Key Features
- Memory Architecture 64 Mbit SDRAM organized as 2M × 32, offering word-width alignment for parallel data buses.
- Performance Rated for a 166 MHz clock frequency with a 5.5 ns access time and a 2 ns write cycle time (word/page), enabling predictable memory timing for synchronous systems.
- Interface Parallel memory interface suitable for designs that use synchronous parallel DRAM connectivity.
- Power Operates from a 3.0 V to 3.6 V supply, matching standard 3 V SDRAM power domains.
- Package Supplied in an 86‑TSOP II package (86‑TFSOP, 0.400" / 10.16 mm width) for PCB space-efficient mounting.
- Operating Range Commercial temperature range: 0°C to 70°C (TA).
Typical Applications
- Embedded memory expansion — Parallel SDRAM socketing or PCB-mounted memory for systems needing a 64‑Mbit DRAM solution with 2M × 32 organization.
- Parallel data buffering — Use where synchronous parallel buffers with 166 MHz clocking and deterministic access time are required.
- Board-level memory replacement — Drop-in option for designs requiring an 86‑TSOP II packaged 64‑Mbit SDRAM at standard 3.0–3.6 V supply.
Unique Advantages
- Standard 2M × 32 organization: Aligns with common parallel bus widths to simplify data path design and memory mapping.
- Predictable timing: 5.5 ns access time and 2 ns write cycle time provide clear timing margins for synchronous system design.
- Compact TSOP II package: 86‑TSOP II (0.400", 10.16 mm width) offers a space-efficient footprint for high-density boards.
- Wide supply compatibility: 3.0–3.6 V operation fits standard 3 V memory power rails for straightforward power integration.
- Commercial temperature rating: Specified 0°C to 70°C operating range for general‑purpose electronics applications.
Why Choose IC DRAM 64MBIT PAR 86TSOP II?
This 64‑Mbit parallel SDRAM combines a 2M × 32 memory organization, synchronous operation at up to 166 MHz, and compact 86‑TSOP II packaging to meet the needs of designs requiring mid‑density, parallel DRAM. Its specified access and write cycle times make it suitable for systems where predictable memory timing and straightforward integration are important.
IC DRAM 64MBIT PAR 86TSOP II is well suited for engineers and procurement teams specifying a commercial‑range SDRAM component with standard 3.0–3.6 V operation and a compact footprint for board‑level memory implementations.
Request a quote or submit an inquiry to obtain pricing, lead-time, and availability for this 64 Mbit parallel SDRAM module.
