H9HCNNNCPMMLXR-NEE

The H9HCNNNCPMMLXR-NEE is SK Hynix’s 4GB LPDDR4X mobile DRAM, a 32Gb device that runs at 4266Mbps on a 2133MHz clock and ships in a 200-ball FBGA. Its defining trait is efficiency: the LPDDR4X interface drops VDDQ to 0.6V, down from the 1.1V used by plain LPDDR4, which cuts I/O switching power at the same data rate. The device operates from a 1.8V VDD and 1.1V VDD2, and SK Hynix lists it in mass production, so it is a current, mainstream option rather than a legacy part. The same silicon appears in both mass-production and customer-sample status on the vendor’s product list, a sign of an established, widely available part number.

Key Features

• LPDDR4X-4266 data rate – 4266Mbps per pin on a 2133MHz clock delivers high mobile-class bandwidth for bandwidth-bound SoCs.
• 4GB density – a 32Gb device, enough for mid-range mobile, networking, and embedded application memory.
• Low-voltage LPDDR4X rails – VDD 1.8V, VDD2 1.1V, and the LPDDR4X-defining VDDQ of 0.6V for reduced I/O power.
• 200-ball FBGA – a compact package footprint suited to space-limited handheld and module designs.
• x16 per channel – the dual-channel LPDDR4X architecture presents two independent 16-bit channels for concurrent access.
• JEDEC LPDDR4X compliant – built to the JEDEC low-power standard, so it drops into controllers that already support LPDDR4X signaling.

Typical Applications

• Smartphones and tablets – the 0.6V VDDQ interface stretches battery life in always-on mobile designs.
• Networking and edge hardware – 4266Mbps bandwidth feeds packet processing and lightweight AI inference at the edge.
• Embedded and IoT modules – 4GB of low-power DRAM supports Linux and Android application workloads.
• Smart displays and set-top boxes – the compact 200-ball footprint fits streaming and UI modules where board space is tight.

Unique Advantages

• Power-optimized I/O – moving VDDQ to 0.6V is the core LPDDR4X advantage, trimming dynamic power without giving up the 4266Mbps rate.
• Concurrent dual-channel access – two 16-bit channels let a memory controller interleave traffic and hold effective bandwidth high under mixed loads.
• Current production status – SK Hynix’s own product list shows this part in mass production, easing long-term sourcing versus end-of-life alternatives.

Why Choose H9HCNNNCPMMLXR-NEE?

The H9HCNNNCPMMLXR-NEE suits designs that want 4GB of high-bandwidth, power-frugal DRAM from a tier-one supplier in a compact 200-ball package. The LPDDR4X-4266 grade gives headroom for graphics, camera, and inference pipelines, while the 0.6V VDDQ keeps the power budget in check. Backed by SK Hynix quality and current mass production, it is a dependable memory choice for both new builds and ongoing programs.

Reach out for pricing, availability, and lead time on the H9HCNNNCPMMLXR-NEE, and tell us your target volume and temperature range so our team can match the correct grade to your design.