H58G66BK8QX105N

The H58G66BK8QX105N is an SK Hynix 8GB (64Gb) LPDDR5X SDRAM built for automotive platforms, qualified over the -40°C to 105°C range that the “Q” grade denotes. Organized as four independent channels on a single chip select (4CH 1CS), each 16Gb x16 channel runs at up to 8533Mbps, so a controller can interleave traffic across all four channels for very high sustained bandwidth. It is a 3rd-generation low-power DRAM in a 441-ball FBGA measuring 14 x 14mm on a 0.65mm pitch.

Power efficiency comes from a multi-rail supply and aggressive scaling: VDD1 at 1.8V, a dual VDD2 rail (VDD2H 1.05V and VDD2L 0.9V), and VDDQ at 0.5V, dropping to 0.3V when DVFSQ is enabled. Lead-free and halogen-free construction rounds out a memory device aimed at reliability-critical, thermally demanding designs.

Key Features

• 8GB Four-Channel LPDDR5X at 8533Mbps – four independent 16Gb x16 channels (4CH, 1CS) each move two data words per WCK cycle, with differential CK, WCK, and RDQS signaling for high-speed capture.
• Automotive -40°C to 105°C Grade – the Q version sits between the V (-40°C to 95°C) and P (-40°C to 125°C) parts, letting a platform select the exact thermal grade its application requires.
• Multi-Rail Low-Power Supply – VDD1 1.8V, dual VDD2 rail at 1.05V and 0.9V, and VDDQ 0.5V, with a 0.3V VDDQ option under DVFSQ for reduced I/O power at lower data rates.
• Dynamic Frequency and Voltage Scaling – DVFSC, DVFSQ, and enhanced E-DVFSC combine with Frequency Set Point (FSP) switching via MR16 for near-seamless changes to timing, ODT, and Vref.
• Optional Link ECC and Parity – an on-die Link ECC option, with RDQS_t doubling as a parity pin when Link Protection is enabled, adds interconnect data-integrity coverage for automotive use.
• Programmable ODT and Signal Conditioning – programmable ODT for CK, CA, DQ, DMI, RDQS, and WCK with VSSQ termination, a VOH-compensated output driver, and selectable background or command-based ZQ calibration.
• Flexible Banking, Refresh, and Power States – programmable 16-bank or 4-bank-group organization, burst lengths of 16 and 32, all-bank and per-bank auto refresh, Auto TCSR, PASR and PARC by bank and segment mask, plus a Deep Sleep mode.

Typical Applications

• ADAS and Autonomous Compute – four-channel 8533Mbps bandwidth feeds sensor fusion and perception pipelines in driver-assistance processors.
• Digital Cockpit and Infotainment – 8GB backs multi-display clusters, navigation, and connected services with a single wide-temperature device.
• Automotive Edge AI – high memory bandwidth and DVFS support on-device vision and driver-monitoring inference within a controlled power budget.

Unique Advantages

• Frequency Set Point switching: dual FSPs let the system switch timing, ODT, and Vref through mode-register writes for low-gap DVFS transitions.
• Deep Sleep mode: a dedicated low-power state minimizes standby current in always-on automotive electronics.
• Interconnect data integrity: optional Link ECC plus Data-Copy and Write-X functions give designers tools for reliability-focused memory subsystems.
• Grade-selectable family: shared silicon across V, Q, and P temperature grades simplifies platform reuse and qualification planning.

Why Choose H58G66BK8QX105N?

The H58G66BK8QX105N combines SK Hynix LPDDR5X performance with 8GB density, four-channel 8533Mbps bandwidth, a scalable multi-rail supply, FSP-based DVFS, optional Link ECC, and Deep Sleep power management in a lead-free, halogen-free 441-ball FBGA rated to 105°C. It is a strong low-power DRAM choice for automotive ADAS, digital cockpit, and edge-AI platforms that must balance bandwidth against a tight thermal and power envelope.

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