H5TQ4G83EFR-TEI
| Part Description |
4Gb DDR3 SDRAM, 512Mx8, DDR3-2133 14-14-14, 1.5V, industrial, 78-FBGA |
|---|---|
| Quantity | 474 Available (as of October 8, 2026) |
| Product Category | DRAM Memory |
|---|---|
| Manufacturer | SK Hynix |
| Manufacturing Status | EOL |
| Manufacturer Standard Lead Time | Contact Us |
| Datasheet |
Specifications & Environmental
| Device Package | 78-BGA (7.5x11.0mm) | Memory Format | DRAM | Technology | SDRAM - DDR3 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 4 Gbit | Access Time | 13.09 ns | Grade | Industrial | ||
| Clock Frequency | 1066 MHz | Voltage | 1.5V | Memory Type | Volatile | ||
| Operating Temperature | -40°C - 95°C | Mounting Method | Surface Mount | Memory Interface | DDR3 SDRAM | ||
| Memory Organization | x8 | Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | ||
| REACH Compliance | REACH Unknown | ECCN | EAR99 | HTS Code | 8542.32.00.36 |
Overview of H5TQ4G83EFR-TEI - 4Gb DDR3 SDRAM 512M x 8 DDR3-2133 78-FBGA
The H5TQ4G83EFR-TEI sits at the top of SK Hynix's 4Gb DDR3 family, carrying the -TE speed grade that runs DDR3-2133 with 14-14-14 timing and a 0.935ns clock period. It holds 4,294,967,296 bits arranged as 512M x 8 across eight internal banks, and the -I suffix qualifies the part over the full -40°C to 95°C industrial temperature range. Address and command inputs latch on the clock edges while data, strobes, and masks are sampled on both edges through an 8-bit prefetch data path, all from a single 1.5V rail.
Key Features
- DDR3-2133 speed grade - the -TE bin specifies tAA of 13.09ns and a 0.935ns average clock period, with programmable CAS latency up to 14 for high-bandwidth transfers.
- 512M x 8 organization - four gigabits split across eight banks with a 1KB page size, well matched to bandwidth-hungry x8 memory arrays.
- Single 1.5V supply - VDD and VDDQ both operate at 1.5V plus or minus 0.075V, with VDDQ tracking VDD to simplify the power design.
- Signal integrity toolkit - dynamic on-die termination, ZQ calibration, an on-chip DLL, and write leveling keep the channel clean at 2133 MT/s; differential DQS strobes and selectable driver strength are standard.
- Industrial temperature handling - full operation from -40°C to 95°C, with the refresh interval halved to 3.9us between 85°C and 95°C to protect data retention.
- 78-ball FBGA - a compact fine-pitch package with asynchronous RESET and optional TDQS on the x8 configuration.
Typical Applications
- Networking and telecom line cards - the DDR3-2133 grade feeds packet buffers and lookup tables where sustained throughput matters.
- Industrial edge systems - the -40°C to 95°C rating suits factory controllers and gateways exposed to wide ambient swings.
- Embedded compute and imaging - eight-bank interleaving and 8-bit prefetch support frame buffering and signal-processing workloads.
Unique Advantages
- Top-bin headroom - because -TE is the fastest grade in this 4Gb family, a design can down-bin to slower DDR3 rates while keeping one validated part.
- Retention-aware refresh - the specified 7.8us interval at 0°C to 85°C and 3.9us above it gives thermal designers a clear rule for hot enclosures.
- Drop-in x8 footprint - the JEDEC 78-ball FBGA aligns with common DDR3 x8 layouts, easing board reuse across memory revisions.
Why Choose H5TQ4G83EFR-TEI?
Buyers pick the H5TQ4G83EFR-TEI when they need the fastest 4Gb DDR3 x8 grade in a fully specified industrial-temperature part. Note that SK Hynix lists this device as end-of-life, so it is best suited to sustaining existing production or last-time-buy programs rather than fresh designs that could target a currently active grade.
Contact our team for current pricing, stock, and lead time on the H5TQ4G83EFR-TEI, and ask about last-time-buy quantities to keep your production line supplied.

Date Founded: 1983
Headquarters: Icheon, South Korea
Employees: ~34,000
Revenue: $68.3 Billion
Certifications and Memberships: ISO9001:2015, IATF 16949, ISO/TS 16949, ISO 14001