H5TQ4G83EFR-TEI

DDR3-2133 4Gb DDR3 SDRAM x8
Part Description

4Gb DDR3 SDRAM, 512Mx8, DDR3-2133 14-14-14, 1.5V, industrial, 78-FBGA

Quantity 474 Available (as of October 8, 2026)
Product CategoryDRAM Memory
ManufacturerSK Hynix
Manufacturing StatusEOL
Manufacturer Standard Lead TimeContact Us
Datasheet

Specifications & Environmental

Device Package78-BGA (7.5x11.0mm)Memory FormatDRAMTechnologySDRAM - DDR3
Memory Size4 GbitAccess Time13.09 nsGradeIndustrial
Clock Frequency1066 MHzVoltage1.5VMemory TypeVolatile
Operating Temperature-40°C - 95°CMounting MethodSurface MountMemory InterfaceDDR3 SDRAM
Memory Organizationx8Moisture Sensitivity Level3RoHS ComplianceCompliant
REACH ComplianceREACH UnknownECCNEAR99HTS Code8542.32.00.36

Overview of H5TQ4G83EFR-TEI - 4Gb DDR3 SDRAM 512M x 8 DDR3-2133 78-FBGA

The H5TQ4G83EFR-TEI sits at the top of SK Hynix's 4Gb DDR3 family, carrying the -TE speed grade that runs DDR3-2133 with 14-14-14 timing and a 0.935ns clock period. It holds 4,294,967,296 bits arranged as 512M x 8 across eight internal banks, and the -I suffix qualifies the part over the full -40°C to 95°C industrial temperature range. Address and command inputs latch on the clock edges while data, strobes, and masks are sampled on both edges through an 8-bit prefetch data path, all from a single 1.5V rail.

Key Features

  • DDR3-2133 speed grade - the -TE bin specifies tAA of 13.09ns and a 0.935ns average clock period, with programmable CAS latency up to 14 for high-bandwidth transfers.
  • 512M x 8 organization - four gigabits split across eight banks with a 1KB page size, well matched to bandwidth-hungry x8 memory arrays.
  • Single 1.5V supply - VDD and VDDQ both operate at 1.5V plus or minus 0.075V, with VDDQ tracking VDD to simplify the power design.
  • Signal integrity toolkit - dynamic on-die termination, ZQ calibration, an on-chip DLL, and write leveling keep the channel clean at 2133 MT/s; differential DQS strobes and selectable driver strength are standard.
  • Industrial temperature handling - full operation from -40°C to 95°C, with the refresh interval halved to 3.9us between 85°C and 95°C to protect data retention.
  • 78-ball FBGA - a compact fine-pitch package with asynchronous RESET and optional TDQS on the x8 configuration.

Typical Applications

  • Networking and telecom line cards - the DDR3-2133 grade feeds packet buffers and lookup tables where sustained throughput matters.
  • Industrial edge systems - the -40°C to 95°C rating suits factory controllers and gateways exposed to wide ambient swings.
  • Embedded compute and imaging - eight-bank interleaving and 8-bit prefetch support frame buffering and signal-processing workloads.

Unique Advantages

  • Top-bin headroom - because -TE is the fastest grade in this 4Gb family, a design can down-bin to slower DDR3 rates while keeping one validated part.
  • Retention-aware refresh - the specified 7.8us interval at 0°C to 85°C and 3.9us above it gives thermal designers a clear rule for hot enclosures.
  • Drop-in x8 footprint - the JEDEC 78-ball FBGA aligns with common DDR3 x8 layouts, easing board reuse across memory revisions.

Why Choose H5TQ4G83EFR-TEI?

Buyers pick the H5TQ4G83EFR-TEI when they need the fastest 4Gb DDR3 x8 grade in a fully specified industrial-temperature part. Note that SK Hynix lists this device as end-of-life, so it is best suited to sustaining existing production or last-time-buy programs rather than fresh designs that could target a currently active grade.

Contact our team for current pricing, stock, and lead time on the H5TQ4G83EFR-TEI, and ask about last-time-buy quantities to keep your production line supplied.

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