EN35QY512A-133WIP(2S)

512Mb SPI NOR Flash Ind.
Part Description

512 Mbit SPI NOR Flash, 133 MHz Quad I/O

Quantity 596 Available (as of May 6, 2026)
Product CategoryMemory
ManufacturerESMT
Manufacturing StatusMP
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package8-pin WSON 5x6mmMemory FormatDRAMTechnologySPI NOR Flash
Memory Size512 MbitAccess Time8 nsGradeIndustrial
Clock Frequency133 MHzVoltage2.5VMemory TypeNon-Volatile
Operating Temperature-40°C – 85°CWrite Cycle Time Word Page500 µsPackaging8-pin WSON 5x6mm
Mounting MethodSurface MountMemory InterfaceParallelMemory Organization64M x 8
Moisture Sensitivity Level3RoHS ComplianceCompliantREACH ComplianceREACH Unknown
QualificationN/AECCNEAR99HTS Code8542.32.00.71

Overview of EN35QY512A-133WIP(2S) – 512 Mbit SPI NOR Flash, 133 MHz Quad I/O

The EN35QY512A-133WIP(2S) from ESMT is a 512 Mbit serial NOR Flash memory device built on a Serial Peripheral Interface (SPI) architecture with Single, Dual and Quad I/O support. It delivers high-density non-volatile code and data storage with fast Quad I/O read performance and industrial temperature range, targeting embedded systems and industrial applications that require secure, updatable firmware and reliable data retention.

Key Features

  • Capacity & Organization — 512 Mbit total capacity organized as 64M × 8 with 256-byte programmable pages and 262,144 pages, suitable for large firmware and data storage.
  • High-speed Quad I/O Read — Supports Quad I/O Fast Read up to 133 MHz for high-throughput read operations; Single/Dual/Quad modes supported with configurable dummy cycles.
  • Serial SPI Interface — Standard SPI-compatible signals and modes (CLK, CS#, DI/DO, WP#, HOLD#) with Single, Dual and Quad I/O command sets for flexible system integration.
  • Single-supply Operation — Operates across a 2.7–3.6 V supply range, compatible with common 3V embedded systems.
  • Fast Program/Erase — Page program time typically 0.5 ms; sector erase typically 40 ms, half-block and block erase times and full chip erase also supported for flexible update strategies.
  • Uniform Sector Architecture & Protection — 4 KB uniform sectors (16,384 sectors), blocks (32 KB/64 KB) with software and hardware write protection, WP# pin, and lockable OTP sector for secure storage.
  • Reliability & Retention — Minimum 100K program/erase cycles per sector and typical data retention of 20 years for long-term reliability.
  • Low Power — Typical active current ~14 mA and typical power-down current ~2 µA to minimize system power impact.
  • Industrial Temperature Range & Package — Rated for −40 °C to 85 °C and available in a compact surface-mount 8-pin WSON (5 × 6 mm) package for space-constrained designs.

Typical Applications

  • Embedded Systems — Stores firmware, boot code and large lookup tables; supports in-field updates and partial-sector programming for efficient maintenance.
  • Industrial Control — Industrial temperature grade and robust erase/program endurance make it suitable for PLCs, motor controllers and factory automation devices.
  • Communications & Networking — High-speed Quad I/O reads accelerate code execution and configuration loading in gateways, routers and edge devices.
  • IoT & Edge Devices — Compact WSON package and low-power standby enable integration into small, battery-aware sensor hubs and IoT edge nodes.

Unique Advantages

  • High-density non-volatile storage: 512 Mbit capacity in a small 8-pin package reduces external memory count and simplifies board design.
  • Flexible read performance: Single/Dual/Quad SPI modes with up to 133 MHz Quad I/O Fast Read let designers scale throughput to application needs.
  • Granular erase and protection: 4 KB uniform sectors and software/hardware write protection enable safe, selective updates without full-chip erase.
  • Designed for long-term use: 100K program/erase cycle endurance and 20-year data retention support lifecycle and field-update requirements.
  • Industrial-ready: −40 °C to 85 °C rating and compact surface-mount packaging meet space and environmental demands of industrial systems.
  • Low idle power: Typical 2 µA power-down current helps preserve energy in standby and battery-backed applications.

Why Choose EN35QY512A-133WIP(2S)?

The EN35QY512A-133WIP(2S) combines high-density, fast Quad I/O read performance and robust sector-level protection in a compact industrial-grade package, making it well suited for embedded and industrial designs that require reliable, updatable non-volatile storage. With industry-standard SPI interfaces, flexible erase/program timing and proven endurance and retention characteristics, this device supports maintainable firmware strategies and long-term field deployments.

Choose this device when you need a scalable, low-power serial flash memory that balances throughput, protection features and industrial temperature operation for secure firmware storage and frequent in-field updates.

Request a quote or submit an inquiry to get pricing and availability for EN35QY512A-133WIP(2S) and support for your design requirements.

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