EN35QYR512A-104WIP(2UC)
| Part Description |
512 Mbit SPI NOR Flash, Industrial 8‑pin WSON |
|---|---|
| Quantity | 1,943 Available (as of May 5, 2026) |
Specifications & Environmental
| Device Package | 8-pin WSON 5x6mm | Memory Format | DRAM | Technology | SPI NOR Flash | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 8 ns | Grade | Industrial | ||
| Clock Frequency | 104 MHz | Voltage | 2.5V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C – 85°C | Write Cycle Time Word Page | 500 µs | Packaging | 8-pin WSON 5x6mm | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 2M x 8 | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.00.71 |
Overview of EN35QYR512A-104WIP(2UC) – 512 Mbit SPI NOR Flash, Industrial 8‑pin WSON
The EN35QYR512A-104WIP(2UC) is a 512 Mbit serial SPI NOR Flash memory designed for industrial embedded storage. It implements a serial SPI architecture with Single/Dual/Quad I/O and is optimized for code and data storage with uniform 4 Kbyte sectors and 256‑byte programmable pages.
With a 104 MHz fast read clock, full 2.7–3.6 V supply range, industrial −40 °C to 85 °C operation and an 8‑pin WSON 5×6 mm package, this device targets industrial and embedded systems requiring reliable, in‑system firmware and data storage with strong program/erase endurance and low standby power.
Key Features
- Core Memory: 512 M‑bit SPI NOR Flash organized as 2M × 8 with 65,536 KByte total and 262,144 pages; 256 bytes per programmable page.
- High‑speed Read: 104 MHz clock rate for Single/Dual/Quad I/O fast read; supports SPI Mode 0 and Mode 3 and configurable dummy cycles for timing flexibility.
- Flexible I/O Modes: Standard, Dual and Quad SPI (CLK, CS#, DI/DO, DQ0–DQ3) with default Quad Enable (QE=1) and WP#, HOLD# disabled by default.
- Program/Erase Performance: Typical page program time 0.5 ms; typical sector erase 40 ms; half‑block and block erase times 200 ms and 300 ms respectively; full chip erase typical 120 s.
- Sector/Block Architecture: Uniform sector architecture with 16,384 sectors of 4 Kbyte; also provided are 2,048 blocks of 32 Kbyte and 1,024 blocks of 64 Kbyte for flexible erase granularity.
- Reliability & Endurance: Minimum 100K program/erase cycles per sector and greater than 20‑year data retention for long‑term storage needs.
- Security & System Features: Lockable 3×512 byte OTP security sector, Read Unique ID, Replay‑Protected Monotonic Counter (RPMC) and SFDP support for device discovery.
- Power Consumption: Low power design with typical active current 24 mA and typical power‑down current 2 µA.
- Voltage & Temperature: Single supply operation with full voltage range 2.7–3.6 V and industrial operating temperature −40 °C to 85 °C.
- Package & Mounting: Surface‑mount 8‑pin WSON package (5×6 mm) suitable for compact industrial boards.
Typical Applications
- Embedded Firmware Storage: Reliable non‑volatile storage for boot code and application firmware in industrial controllers and appliances.
- Industrial Control Systems: Stores configuration, calibration data and firmware images where industrial temperature range and endurance matter.
- Connectivity & IoT Gateways: Holds firmware, security parameters and unique IDs for remote devices requiring robust field updates.
- Consumer & Professional Equipment: Firmware and parameter storage for devices that benefit from Quad SPI read performance and low power standby.
Unique Advantages
- High‑density Non‑volatile Storage: 512 Mbit capacity with 256‑byte programmable pages enables large firmware images and data sets in a compact footprint.
- Fast, Flexible Read Modes: Single/Dual/Quad SPI at 104 MHz allows designers to scale read throughput to system needs without changing package.
- Granular Erase Control: 4 Kbyte uniform sectors and multiple block sizes let you minimize erase scope during in‑field updates to reduce wear.
- Field‑oriented Reliability: 100K program/erase cycles and >20‑year data retention support long product lifecycles in industrial deployments.
- Low Standby Power: Typical 2 µA power‑down current conserves energy in battery‑backed or low‑power systems.
- Compact Industrial Package: 8‑pin WSON (5×6 mm) offers a small board footprint while maintaining robust thermal and mechanical characteristics for industrial use.
Why Choose EN35QYR512A-104WIP(2UC)?
The EN35QYR512A-104WIP(2UC) combines high capacity, flexible SPI I/O modes, and industrial temperature operation to deliver a practical storage solution for embedded and industrial systems. With fast 104 MHz read performance, uniform 4 Kbyte sectors for efficient erase management, and proven program/erase endurance, it addresses demanding firmware and data‑storage requirements.
This device is well suited for designers who need reliable, long‑lived non‑volatile memory in a compact SMD package, offering a balance of throughput, low power, and field update capabilities supported by features like OTP, unique ID, and RPMC.
Request a quote or submit an inquiry to receive pricing, availability and ordering information for EN35QYR512A-104WIP(2UC), including sample and volume purchase options.
Date Founded: 1998
Headquarters: Hsinchu Science Park, Hsinchu, Taiwan
Employees: 400+
Revenue: $377.8 Million
Certifications and Memberships: N/A