IS42S16400J-7B2LI-TR

IC DRAM 64MBIT PAR 60TFBGA
Part Description

IC DRAM 64MBIT PAR 60TFBGA

Quantity 1,256 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package60-TFBGA (6.4x10.1)Memory FormatDRAMTechnologySDRAM
Memory Size64 MbitAccess Time5.4 nsGradeIndustrial
Clock Frequency143 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging60-TFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization4M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of IS42S16400J-7B2LI-TR – IC DRAM 64MBIT PAR 60TFBGA

The IS42S16400J-7B2LI-TR is a 64 Mbit volatile SDRAM organized as 4M x 16 with a parallel memory interface. It is provided in a 60‑TFBGA (6.4 × 10.1 mm) package and operates from a 3.0 V to 3.6 V supply with an operating ambient temperature range of -40 °C to 85 °C.

This device targets designs that require compact, parallel SDRAM storage with specified timing and electrical characteristics, delivering controlled access time and clock frequency for system memory implementations.

Key Features

  • Memory Type & Capacity 64 Mbit SDRAM organized as 4M × 16, providing parallel DRAM storage for volatile data.
  • Performance Supports a clock frequency up to 143 MHz and an access time of 5.4 ns for predictable memory access timing.
  • Voltage Operates from 3.0 V to 3.6 V, compatible with standard 3 V SDRAM power domains.
  • Package 60‑TFBGA package (6.4 × 10.1 mm) for compact board footprint and ball‑grid mounting.
  • Interface Parallel memory interface suitable for designs requiring synchronous parallel DRAM connectivity.
  • Operating Range Specified for ambient operation from -40 °C to 85 °C to support a wide range of environmental conditions.

Typical Applications

  • General-purpose volatile memory — Provides 64 Mbit parallel SDRAM capacity for systems needing synchronous DRAM storage.
  • Embedded system memory — Compact 60‑TFBGA package and standard 3 V supply make it suitable for embedded boards with parallel memory buses.
  • Prototype and evaluation platforms — Predictable access time (5.4 ns) and 143 MHz clock support timing verification in development setups.

Unique Advantages

  • Defined performance envelope — 143 MHz clock rating and 5.4 ns access time enable designers to plan system timing precisely.
  • Standard voltage compatibility — 3.0 V to 3.6 V supply range aligns with common SDRAM power rails for straightforward integration.
  • Compact BGA footprint — 60‑TFBGA (6.4 × 10.1 mm) reduces PCB area compared with larger packages while supporting ball‑grid mounting.
  • Broad ambient operating range — Specified for -40 °C to 85 °C to cover typical industrial and commercial temperature requirements.
  • Clear memory organization — 4M × 16 configuration simplifies memory mapping and interface planning for parallel SDRAM implementations.

Why Choose IS42S16400J-7B2LI-TR?

The IS42S16400J-7B2LI-TR combines a defined SDRAM architecture (4M × 16) with documented timing (5.4 ns access time, 143 MHz clock) and a compact 60‑TFBGA package, delivering a straightforward parallel memory option for system designers. Its 3.0–3.6 V supply range and -40 °C to 85 °C operating window make it suitable for a wide set of board‑level applications that require reliable, synchronous volatile storage.

Manufactured by ISSI, this part is appropriate for engineers and procurement teams seeking a 64 Mbit SDRAM device with clear electrical and mechanical specifications to support integration, timing validation, and lifecycle planning.

Request a quote or contact sales for pricing and availability of the IS42S16400J-7B2LI-TR to support your design or production needs.

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