IS42S32200N-6BLI-TR

IC DRAM 64MBIT PARALLEL 90TFBGA
Part Description

IC DRAM 64MBIT PARALLEL 90TFBGA

Quantity 777 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusActive
Manufacturer Standard Lead Time14 Weeks
Datasheet

Specifications & Environmental

Device Package90-TFBGA (8x13)Memory FormatDRAMTechnologySDRAM
Memory Size64 MbitAccess Time5.4 nsGradeIndustrial
Clock Frequency166 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging90-TFBGA
Mounting MethodVolatileMemory InterfaceLVTTLMemory Organization2M x 32
Moisture Sensitivity LevelN/ARoHS ComplianceUnknownREACH ComplianceREACH Unknown
QualificationN/AECCNN/AHTS CodeN/A

Overview of IS42S32200N-6BLI-TR – IC DRAM 64MBIT PARALLEL 90TFBGA

The IS42S32200N-6BLI-TR is a 64 Mbit volatile SDRAM organized as 2M × 32. It implements a parallel SDRAM architecture with LVTTL signaling and is intended for systems requiring off-chip dynamic memory.

Key characteristics include a 166 MHz clock rate, 5.4 ns access time, a 3.0 V to 3.6 V supply range, and operation across a −40°C to 85°C ambient temperature window, delivered in a compact 90‑TFBGA (8×13) package.

Key Features

  • Memory Technology SDRAM volatile memory format suitable for standard parallel DRAM implementations.
  • Capacity & Organization 64 Mbit total capacity organized as 2M × 32 for wide‑bus data transfers.
  • Performance 166 MHz clock frequency with an access time of 5.4 ns, enabling responsive read/write cycles within the specified timing.
  • Interface LVTTL memory interface signaling for parallel data communication.
  • Power Operating supply voltage from 3.0 V to 3.6 V.
  • Package & Mounting Supplied in a 90‑TFBGA (8×13) package for surface mounting and space‑constrained board layouts.
  • Operating Temperature Rated for −40°C to 85°C (TA) operation.

Unique Advantages

  • Compact BGA footprint: The 90‑TFBGA (8×13) package provides a small board area for dense PCB designs while supporting a wide data bus.
  • Wide voltage tolerance: Operation across 3.0 V to 3.6 V accommodates typical 3 V system rails and variations.
  • High-speed access: 166 MHz clocking and 5.4 ns access time support fast memory transactions for latency-sensitive tasks.
  • Wide operating temperature: −40°C to 85°C rating addresses a broad range of ambient environments.
  • Parallel 32-bit data path: 2M × 32 organization enables wide, efficient data transfers in parallel memory architectures.

Why Choose IS42S32200N-6BLI-TR?

The IS42S32200N-6BLI-TR provides a straightforward 64 Mbit SDRAM solution combining a parallel 32‑bit data organization with 166 MHz operation and low‑nanosecond access time. Its electrical and thermal specifications make it suitable for designs that require predictable SDRAM performance within a 3.0 V–3.6 V power domain and an extended ambient temperature range.

This device is appropriate for system designs that need compact BGA packaging, a parallel LVTTL interface, and well‑defined timing characteristics. Selecting this part supports consistent memory performance and board‑level density where a 64 Mbit volatile SDRAM is required.

Request a quote or submit an inquiry for availability, lead times, and volume pricing to support your design and procurement planning.

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