IS42S32200N-6TLI-TR

IC DRAM 64MBIT PAR 86TSOP II
Part Description

IC DRAM 64MBIT PAR 86TSOP II

Quantity 753 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusActive
Manufacturer Standard Lead Time14 Weeks
Datasheet

Specifications & Environmental

Device Package86-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size64 MbitAccess Time5.4 nsGradeIndustrial
Clock Frequency166 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging86-TFSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceLVTTLMemory Organization2M x 32
Moisture Sensitivity LevelN/ARoHS ComplianceN/AREACH ComplianceREACH Unknown
QualificationN/AECCNN/AHTS CodeN/A

Overview of IS42S32200N-6TLI-TR – IC DRAM 64MBIT PAR 86TSOP II

The IS42S32200N-6TLI-TR is a 64 Mbit SDRAM organized as 2M × 32 bits in a 86‑TSOP II package. It is a volatile DRAM device with an LVTTL memory interface designed for applications requiring synchronous DRAM buffering and system memory.

Key attributes include a 166 MHz clock frequency, 5.4 ns access time, a 3.0 V to 3.6 V supply range, and an operating temperature range of −40 °C to 85 °C, making it suitable for designs that need mid-density SDRAM in a compact TSOP footprint.

Key Features

  • Memory Core 64 Mbit SDRAM organized as 2M × 32 bits, provided as a volatile DRAM memory format.
  • Performance 166 MHz clock frequency with a typical access time of 5.4 ns, supporting synchronous DRAM operation.
  • Interface LVTTL memory interface for standard synchronous signaling in digital systems.
  • Power Operates from a 3.0 V to 3.6 V supply range.
  • Package 86‑TSOP II (86‑TFSOP, 0.400" / 10.16 mm width) supplier device package optimized for compact board layouts.
  • Environmental / Temperature Range Specified operating ambient temperature from −40 °C to 85 °C (TA).

Typical Applications

  • Embedded Systems Use as synchronous DRAM storage in embedded designs that require a 2M × 32 memory organization and LVTTL interface.
  • Buffer Memory Suitable for buffering and temporary storage where a 64 Mbit volatile SDRAM with 166 MHz clocking is needed.
  • Industrial Electronics Deploy in industrial equipment that operates across −40 °C to 85 °C and requires compact TSOP‑packaged DRAM.

Unique Advantages

  • Mid-density SDRAM capacity: 64 Mbit organized as 2M × 32 provides a balanced memory size for designs requiring moderate working memory.
  • Synchronous performance: 166 MHz clock frequency and 5.4 ns access time deliver predictable, synchronous memory timing for system designs.
  • Standard LVTTL interface: Compatibility with LVTTL signaling eases integration into digital memory subsystems.
  • Wide supply voltage range: Operates from 3.0 V to 3.6 V to match common 3.3 V system rails.
  • Compact TSOP II package: 86‑TSOP II (10.16 mm width) minimizes PCB footprint for space‑constrained layouts.
  • Extended operating temperature: −40 °C to 85 °C rating supports deployment in temperature‑varied environments.

Why Choose IS42S32200N-6TLI-TR?

The IS42S32200N-6TLI-TR positions itself as a compact, mid-density SDRAM option for designs that require synchronous DRAM performance in an 86‑TSOP II package. Its 2M × 32 organization, 166 MHz clocking, and LVTTL interface make it suitable for applications needing predictable synchronous memory behavior and straightforward integration with 3.3 V systems.

This device is appropriate for engineers and procurement teams seeking a reliable 64 Mbit DRAM with specified access time and extended ambient temperature range, offering a balance of capacity, timing, and a compact package for constrained PCB layouts.

Request a quote or contact sales to discuss availability, packaging, and volume pricing for the IS42S32200N-6TLI-TR.

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