IS42S32200N-6TLI-TR
| Part Description |
IC DRAM 64MBIT PAR 86TSOP II |
|---|---|
| Quantity | 753 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 14 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 86-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Mbit | Access Time | 5.4 ns | Grade | Industrial | ||
| Clock Frequency | 166 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 86-TFSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | LVTTL | Memory Organization | 2M x 32 | ||
| Moisture Sensitivity Level | N/A | RoHS Compliance | N/A | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | N/A | HTS Code | N/A |
Overview of IS42S32200N-6TLI-TR – IC DRAM 64MBIT PAR 86TSOP II
The IS42S32200N-6TLI-TR is a 64 Mbit SDRAM organized as 2M × 32 bits in a 86‑TSOP II package. It is a volatile DRAM device with an LVTTL memory interface designed for applications requiring synchronous DRAM buffering and system memory.
Key attributes include a 166 MHz clock frequency, 5.4 ns access time, a 3.0 V to 3.6 V supply range, and an operating temperature range of −40 °C to 85 °C, making it suitable for designs that need mid-density SDRAM in a compact TSOP footprint.
Key Features
- Memory Core 64 Mbit SDRAM organized as 2M × 32 bits, provided as a volatile DRAM memory format.
- Performance 166 MHz clock frequency with a typical access time of 5.4 ns, supporting synchronous DRAM operation.
- Interface LVTTL memory interface for standard synchronous signaling in digital systems.
- Power Operates from a 3.0 V to 3.6 V supply range.
- Package 86‑TSOP II (86‑TFSOP, 0.400" / 10.16 mm width) supplier device package optimized for compact board layouts.
- Environmental / Temperature Range Specified operating ambient temperature from −40 °C to 85 °C (TA).
Typical Applications
- Embedded Systems Use as synchronous DRAM storage in embedded designs that require a 2M × 32 memory organization and LVTTL interface.
- Buffer Memory Suitable for buffering and temporary storage where a 64 Mbit volatile SDRAM with 166 MHz clocking is needed.
- Industrial Electronics Deploy in industrial equipment that operates across −40 °C to 85 °C and requires compact TSOP‑packaged DRAM.
Unique Advantages
- Mid-density SDRAM capacity: 64 Mbit organized as 2M × 32 provides a balanced memory size for designs requiring moderate working memory.
- Synchronous performance: 166 MHz clock frequency and 5.4 ns access time deliver predictable, synchronous memory timing for system designs.
- Standard LVTTL interface: Compatibility with LVTTL signaling eases integration into digital memory subsystems.
- Wide supply voltage range: Operates from 3.0 V to 3.6 V to match common 3.3 V system rails.
- Compact TSOP II package: 86‑TSOP II (10.16 mm width) minimizes PCB footprint for space‑constrained layouts.
- Extended operating temperature: −40 °C to 85 °C rating supports deployment in temperature‑varied environments.
Why Choose IS42S32200N-6TLI-TR?
The IS42S32200N-6TLI-TR positions itself as a compact, mid-density SDRAM option for designs that require synchronous DRAM performance in an 86‑TSOP II package. Its 2M × 32 organization, 166 MHz clocking, and LVTTL interface make it suitable for applications needing predictable synchronous memory behavior and straightforward integration with 3.3 V systems.
This device is appropriate for engineers and procurement teams seeking a reliable 64 Mbit DRAM with specified access time and extended ambient temperature range, offering a balance of capacity, timing, and a compact package for constrained PCB layouts.
Request a quote or contact sales to discuss availability, packaging, and volume pricing for the IS42S32200N-6TLI-TR.