IS42S32200N-7BLI-TR

IC DRAM 64MBIT PAR 90TFBGA
Part Description

IC DRAM 64MBIT PAR 90TFBGA

Quantity 668 Available (as of May 6, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusActive
Manufacturer Standard Lead Time14 Weeks
Datasheet

Specifications & Environmental

Device Package90-TFBGA (8x13)Memory FormatDRAMTechnologySDRAM
Memory Size64 MbitAccess Time5.4 nsGradeIndustrial
Clock Frequency143 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging90-TFBGA
Mounting MethodVolatileMemory InterfaceLVTTLMemory Organization2M x 32
Moisture Sensitivity LevelN/ARoHS ComplianceUnknownREACH ComplianceREACH Unknown
QualificationN/AECCNN/AHTS CodeN/A

Overview of IS42S32200N-7BLI-TR – 64 Mbit SDRAM, 2M × 32, 90-TFBGA

The IS42S32200N-7BLI-TR is a 64 Mbit synchronous DRAM (SDRAM) organized as 2M × 32, supplied by ISSI (Integrated Silicon Solution Inc). It implements a LVTTL memory interface and is packaged in a 90‑TFBGA (8×13) footprint.

Designed for systems that require moderate-density volatile memory, this SDRAM offers a 143 MHz clock frequency, 5.4 ns access time, and operates from 3.0 V to 3.6 V with an operating temperature range of -40°C to 85°C.

Key Features

  • Memory Core 64 Mbit SDRAM organized as 2M × 32 for a 32‑bit data path.
  • Performance Supports a 143 MHz clock frequency and specifies a 5.4 ns access time.
  • Interface LVTTL memory interface for synchronous operation with compatible system logic.
  • Power Operates from a supply voltage range of 3.0 V to 3.6 V.
  • Package 90‑TFBGA package (8×13) providing a compact ball‑grid array footprint.
  • Temperature Range Rated for operation from -40°C to 85°C (TA).

Typical Applications

  • System Memory Buffers Used as working memory or buffering where a 64 Mbit SDRAM with a 32‑bit data path is required.
  • High‑speed Data Handling Suitable for designs that utilize a 143 MHz clock and require deterministic SDRAM access times.
  • Embedded and Industrial Electronics Applicable in equipment that needs memory operating across an extended temperature range (-40°C to 85°C).

Unique Advantages

  • 32‑bit Data Organization: Provides a wide data path (2M × 32) for higher throughput per access compared to narrower organizations.
  • Defined Timing Performance: 143 MHz clock support and 5.4 ns access time offer clear performance parameters for system timing design.
  • Wide Supply Range: 3.0 V to 3.6 V operation accommodates typical 3 V system rails and variation tolerance.
  • Compact BGA Package: 90‑TFBGA (8×13) footprint supports space-constrained board layouts while providing BGA mounting characteristics.
  • Extended Operating Temperature: -40°C to 85°C rating enables use in temperature‑sensitive embedded and industrial environments.
  • Manufacturer Support: Supplied by ISSI (Integrated Silicon Solution Inc), providing standard vendor sourcing for production designs.

Why Choose IC DRAM 64MBIT PAR 90TFBGA?

The IS42S32200N-7BLI-TR positions itself as a straightforward 64 Mbit SDRAM option when a 2M × 32 organization, LVTTL interface, and clearly defined timing (143 MHz, 5.4 ns) are required. Its supply voltage window and extended operating temperature make it suitable for systems that need stable SDRAM behavior across typical industrial temperature ranges.

This device is appropriate for designers and procurement teams specifying moderate-density synchronous DRAM with a compact 90‑TFBGA package, offering predictable timing characteristics and a 32‑bit data interface for throughput-conscious designs.

Request a quote or contact sales to obtain pricing, lead times and availability for the IS42S32200N-7BLI-TR.

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