MT48LC16M8A2BB-6A:L
| Part Description |
IC DRAM 128MBIT PAR 60FBGA |
|---|---|
| Quantity | 923 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 60-FBGA (8x16) | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 128 Mbit | Access Time | 5.4 ns | Grade | Commercial | ||
| Clock Frequency | 167 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | 12 ns | Packaging | 60-FBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 16M x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0002 |
Overview of MT48LC16M8A2BB-6A:L – IC DRAM 128MBIT PAR 60FBGA
The MT48LC16M8A2BB-6A:L is a 128 Mbit synchronous DRAM (SDRAM) device organized as 16M × 8 with four internal banks and a parallel memory interface. It provides fully synchronous, pipelined operation with support for programmable burst lengths and hardware refresh modes.
Designed for systems that require parallel SDRAM at up to a 167 MHz clock, the device delivers predictable timing (access time listed at 5.4 ns) and is packaged in a 60-ball FBGA (8 mm × 16 mm) footprint, operating from a single 3.0 V to 3.6 V supply and specified for 0°C to +70°C ambient.
Key Features
- Memory Architecture: 128 Mbit SDRAM organized as 16M × 8 with four internal banks, providing a parallel memory interface for system-level DRAM needs.
- Performance: 167 MHz clock frequency (speed grade -6A) with timing options documented for 3-3-3 CAS/RCD/RP; access time specified as 5.4 ns and a write cycle time (word page) of 12 ns.
- Synchronous, Pipelined Operation: Fully synchronous SDRAM with all signals registered on the positive clock edge and internal pipelining that allows column address changes every clock cycle.
- Burst and Refresh Support: Programmable burst lengths (1, 2, 4, 8, or full page), auto precharge modes, auto refresh, and self-refresh modes as described in the device documentation.
- Electrical: Single 3.3 V ±0.3 V power supply range (3.0 V to 3.6 V) with LVTTL-compatible inputs and outputs.
- Package: 60-ball FBGA (8 mm × 16 mm) package (60-FBGA) for compact board-level integration.
- Operating Conditions: Commercial temperature range of 0°C to +70°C (TA) as specified in the product data.
Typical Applications
- Embedded memory subsystems — Use as parallel SDRAM for system memory expansion where a 128 Mbit density and 3.3 V supply are required.
- Legacy parallel-memory designs — Drop-in parallel SDRAM solution in designs that use a 60-ball FBGA footprint and synchronous DRAM timing.
- High-throughput buffering — Suitable for buffer memory roles that leverage programmable burst lengths and internally pipelined, banked operation at up to 167 MHz.
Unique Advantages
- Standard SDRAM timing options: Documented speed-grade timing (including -6A at 167 MHz with 3-3-3 timings) for predictable system integration and timing closure.
- Flexible burst control: Programmable burst lengths and auto precharge capabilities simplify controller design for sequential access patterns.
- Power and signal compatibility: Single 3.3 V supply and LVTTL-compatible I/O support common system voltage domains and interface requirements.
- Compact FBGA package: 60-ball FBGA (8×16 mm) enables space-efficient board layouts while preserving routing access for parallel memory buses.
- Built-in refresh management: Auto refresh and self-refresh modes reduce external refresh control complexity and support stable data retention.
Why Choose MT48LC16M8A2BB-6A:L?
The MT48LC16M8A2BB-6A:L positions itself as a straightforward, documented 128 Mbit parallel SDRAM option with synchronous, pipelined internal operation and multiple refresh and burst modes. Its electrical and timing characteristics—167 MHz clock capability, 5.4 ns access time (specified), and single 3.3 V supply—make it suitable for system designs requiring a predictable, compact SDRAM implementation in a 60-FBGA package.
Engineers designing or supporting legacy and new systems that require parallel SDRAM density and conventional timing options will find this device well-documented in the manufacturer’s datasheet and available in the specified commercial temperature range for stable integration.
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