MTFC4GLGDQ-AIT Z TR
| Part Description |
IC FLASH 32GBIT MMC 100LBGA |
|---|---|
| Quantity | 1,208 Available (as of May 6, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 100-LBGA (14x18) | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | N/A | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 100-LBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | MMC | Memory Organization | 4G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MTFC4GLGDQ-AIT Z TR – IC FLASH 32GBIT MMC 100LBGA
The MTFC4GLGDQ-AIT Z TR is a 32 Gbit non-volatile NAND flash memory device in Micron's e•MMC™ series. It provides MMC interface storage in a compact 100-LBGA (14×18) package.
Its core characteristics — 32 Gbit capacity organized as 4G × 8, MMC interface, 2.7 V–3.6 V supply range and an operating temperature range of −40°C to 85°C (TA) — make it suitable for designs that require board-level MMC flash storage with defined thermal and voltage envelopes.
Key Features
- Memory Type Non-volatile FLASH (NAND) memory providing persistent storage without external power.
- Capacity & Organization 32 Gbit capacity organized as 4G × 8, delivering a high-density storage option in a single device.
- Interface MMC memory interface for integration into systems that accept MMC flash devices.
- Supply Voltage Operates from 2.7 V to 3.6 V, supporting common 3 V system rails.
- Package 100-LBGA (14×18) supplier device package for surface-mount board-level integration.
- Temperature Range Rated for operation from −40°C to 85°C (TA), suitable for applications within that ambient range.
Typical Applications
- MMC storage implementations — For systems that require MMC-interface non-volatile storage with a 32 Gbit capacity.
- Board-level memory modules — Surface-mount integration using the 100-LBGA (14×18) package footprint.
- Temperature-constrained environments — Designs operating within the −40°C to 85°C ambient range can use this device for persistent storage.
- 3 V system designs — Systems with 2.7 V–3.6 V supply rails can integrate this memory without additional voltage translation.
Unique Advantages
- High-density onboard storage: 32 Gbit NAND flash organized as 4G × 8 provides substantial storage capacity in a single device.
- Standard MMC interface: MMC interface simplifies integration into systems expecting e•MMC™-series memory devices.
- Compact package footprint: 100-LBGA (14×18) package enables board-level placement while conserving PCB area.
- Wide supply voltage window: 2.7 V–3.6 V operation fits common 3 V system power domains.
- Industrial ambient range: Specified operation from −40°C to 85°C (TA) supports deployments across a wide temperature span.
Why Choose IC FLASH 32GBIT MMC 100LBGA?
The MTFC4GLGDQ-AIT Z TR combines Micron's e•MMC™-series NAND flash in a 32 Gbit device with an MMC interface and a compact 100-LBGA package, offering a clear option where board-level MMC storage, defined supply voltage compatibility, and a specified ambient temperature range are required. Its organization and format provide a straightforward storage element for designs that accept MMC flash parts.
This device is suited to designers and procurement teams seeking a Micron-manufactured non-volatile NAND flash memory in a standardized MMC form factor, providing capacity, package density, and operating-range specifics that support medium- to high-density MMC storage implementations.
Request a quote or contact sales to obtain pricing, availability, and ordering information for the MTFC4GLGDQ-AIT Z TR.
