AS4C16M16S-6TIN
| Part Description |
IC DRAM 256MBIT PAR 54TSOP II |
|---|---|
| Quantity | 455 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Alliance Memory, Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Mbit | Access Time | 5.4 ns | Grade | Industrial | ||
| Clock Frequency | 166 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | 12 ns | Packaging | 54-TSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 16M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0024 |
Overview of AS4C16M16S-6TIN - 256Mbit Synchronous DRAM
The AS4C16M16S-6TIN is a 256Mbit synchronous DRAM (SDRAM) organized as 16M x 16, designed for applications requiring high-density volatile memory with parallel interface. This TSOP II packaged device operates at up to 166MHz clock frequency and provides reliable data storage for embedded systems, industrial controllers, and computing applications across an extended temperature range of -40°C to 85°C.
Key Features
- Memory Configuration - 256Mbit density organized as 16 million words by 16 bits, providing flexible data width for 16-bit and 32-bit bus architectures.
- High-Speed Operation - 166MHz clock frequency with 5.4ns access time enables responsive system performance for real-time applications.
- Power Supply - Single 3V to 3.6V supply voltage simplifies power distribution and reduces board complexity.
- Package - 54-pin TSOP II (10.16mm width) footprint offers space-efficient surface-mount installation with industry-standard pinout.
- Temperature Range - Extended -40°C to 85°C ambient operating range supports industrial and harsh environment deployments.
- Write Cycle Performance - 12ns write cycle time ensures efficient data throughput for memory-intensive operations.
Typical Applications
- Industrial Automation - This SDRAM provides working memory for programmable logic controllers (PLCs) and human-machine interfaces (HMIs) where the extended temperature tolerance ensures reliable operation in factory floor environments with variable thermal conditions.
- Embedded Computing Systems - The parallel interface and 166MHz operation make this device suitable for embedded processors and microcontrollers that require synchronous DRAM for program execution and data buffering in legacy system upgrades or cost-sensitive designs.
- Telecommunications Equipment - Used in routers, switches, and base stations where the 256Mbit density provides adequate buffer memory for packet processing and the industrial temperature range supports equipment deployed in outdoor cabinets or uncontrolled environments.
- Test and Measurement Instruments - The device serves as data acquisition buffer memory in oscilloscopes, spectrum analyzers, and data loggers where reliable volatile storage is needed for waveform capture and signal processing operations.
- Legacy System Maintenance - Provides drop-in memory replacement for aging industrial and commercial equipment originally designed around SDRAM technology, extending the service life of fielded systems.
Unique Advantages
- Industry-Standard Footprint: The 54-TSOP II package matches common SDRAM layouts, enabling straightforward PCB integration and compatibility with existing board designs.
- Simplified Power Design: Single-voltage 3.3V operation eliminates the need for multiple power rails, reducing BOM cost and board space requirements.
- Extended Environmental Capability: Industrial-grade -40°C to 85°C temperature range eliminates the need for thermal management in many applications, reducing system complexity.
- Proven SDRAM Architecture: Mature synchronous DRAM technology provides predictable timing characteristics and well-documented interface specifications for straightforward firmware development.
- Parallel Interface Compatibility: Direct connection to legacy processor buses without protocol translation or bridging components simplifies migration from older memory technologies.
- Density and Organization Balance: 16M x 16 configuration aligns with common 16-bit and 32-bit data path widths in industrial and embedded controllers.
Why Choose AS4C16M16S-6TIN?
This synchronous DRAM is positioned for industrial and embedded applications where proven parallel memory technology, extended temperature operation, and straightforward integration are priorities. The device is particularly well-suited for legacy system sustainment, equipment refurbishment, and designs where mature SDRAM architecture offers lower risk than newer memory technologies. The 256Mbit density strikes a practical balance for embedded controllers, industrial automation, and telecommunications applications that do not require the highest memory densities.
For system designers working with established processor platforms or maintaining fielded equipment, this SDRAM provides reliable volatile memory with industry-standard electrical and mechanical characteristics. The extended temperature specification and TSOP II packaging support deployment in industrial environments without requiring premium components or specialized thermal management.
Contact Us for Pricing and Availability
To request a quote for the AS4C16M16S-6TIN or discuss your memory requirements, please contact our technical sales team. We can provide detailed specifications, application guidance, and volume pricing to support your design and procurement needs.