AS4C16M16SA-7TCN

The AS4C16M16SA-7TCN is a 256 Mbit volatile SDRAM organized as 16M × 16 with a parallel memory interface. It provides a 143 MHz clock frequency and a 5.4 ns access time for synchronous DRAM operations.

Offered in a 54‑lead TSOP II (0.400", 10.16 mm width) package and specified for 3.0 V to 3.6 V operation and 0 °C to 70 °C ambient temperature, this device is sized for designs requiring mid‑density parallel SDRAM in a compact TSOP footprint.

Key Features

• Core / Memory Organization  256 Mbit SDRAM organized as 16M × 16, providing a parallel data path for synchronous DRAM access.
• Performance  Clock frequency: 143 MHz and access time of 5.4 ns to support synchronous read/write timing requirements.
• Timing  Write cycle time (word/page): 14 ns, enabling predictable write timing in parallel memory systems.
• Power  Supply voltage range 3.0 V to 3.6 V to match typical 3.3 V system rails.
• Package  54‑lead TSOP II (0.400", 10.16 mm width) surface‑mount package suitable for compact board layouts.
• Operating Conditions  Operating ambient temperature range of 0 °C to 70 °C (TA) as specified for standard commercial environments.

Typical Applications

• Parallel memory architectures  Acts as a 256 Mbit parallel SDRAM device for systems that require a 16M × 16 organization and synchronous DRAM timing.
• Systems with 3.0–3.6 V rails  Designed for use where the system supply falls within the specified 3.0 V to 3.6 V range.
• Space‑constrained board designs  The 54‑TSOP II (0.400", 10.16 mm) package supports compact surface‑mount placement.
• Commercial temperature applications  Suitable for designs operating within the 0 °C to 70 °C ambient temperature window.

Unique Advantages

• Right‑sized capacity: 256 Mbit density organized as 16M × 16 provides a mid‑range memory option without overprovisioning board area.
• Synchronous performance: 143 MHz clock and 5.4 ns access time deliver predictable synchronous read/write timing for parallel memory systems.
• Compact TSOP II packaging: 54‑lead TSOP II (0.400", 10.16 mm) enables higher memory density on space‑limited PCBs.
• Standard voltage compatibility: 3.0 V to 3.6 V supply range aligns with common 3.3 V system rails for straightforward integration.
• Deterministic write timing: 14 ns write cycle time (word/page) supports consistent write operation planning in system timing budgets.

Why Choose AS4C16M16SA-7TCN?

The AS4C16M16SA-7TCN positions itself as a practical 256 Mbit parallel SDRAM option combining synchronous access performance with a compact 54‑TSOP II package. Its 16M × 16 organization, 143 MHz clocking and 5.4 ns access time provide clear, verifiable performance parameters for systems that require predictable SDRAM behavior.

This device is suited to designs that need a mid‑density SDRAM with standard 3.0–3.6 V operation and commercial temperature range, offering a balance of capacity, timing, and package compactness for engineers optimizing board area and memory performance.

Request a quote or contact sales to discuss pricing, availability, and lead times for the AS4C16M16SA-7TCN.