AS4C16M16SA-7BCN

The AS4C16M16SA-7BCN is a 256 Mbit volatile DRAM device implemented in SDRAM architecture with a parallel memory interface. It is organized as 16M × 16 bits and supplied in a 54‑TFBGA (8×8) package.

This device targets designs that require a moderate-density parallel SDRAM solution with defined electrical and timing characteristics: a clock frequency up to 143 MHz, 5.4 ns access time, and a write cycle time of 14 ns, operating from 3.0 V to 3.6 V and across an ambient temperature range of 0 °C to 70 °C.

Key Features

• Memory Type & Technology Volatile SDRAM architecture providing standard DRAM behavior for temporary data storage.
• Organization & Density 16M × 16 organization yielding a total memory size of 256 Mbit.
• Interface Parallel memory interface suitable for parallel DRAM subsystem designs.
• Performance Clock frequency up to 143 MHz with a listed access time of 5.4 ns and a write cycle time (word page) of 14 ns.
• Power Operating voltage range from 3.0 V to 3.6 V.
• Package 54‑TFBGA package (8×8) providing a compact ball grid array footprint.
• Operating Conditions Specified ambient operating temperature range of 0 °C to 70 °C.

Typical Applications

• Parallel memory subsystems Use as a 256 Mbit parallel SDRAM device in boards and modules that require 16M × 16 memory organization.
• External DRAM for processors Provides temporary data storage for processors and controllers that interface with parallel SDRAM.
• Compact board-level designs The 54‑TFBGA (8×8) package supports space-constrained PCB layouts needing moderate-density volatile memory.

Unique Advantages

• 256 Mbit density in a compact package: 16M × 16 organization in a 54‑TFBGA (8×8) package balances capacity with board space efficiency.
• Deterministic timing data: Specified 5.4 ns access time and 14 ns write cycle time enable predictable performance analysis.
• Defined clock capability: Rated for operation up to 143 MHz to support designs targeting that operating frequency.
• Standard SDRAM technology: Uses SDRAM architecture for conventional volatile memory behavior and system integration.
• Wide supply tolerance: 3.0 V to 3.6 V supply range accommodates standard 3 V power domains.
• Specified operating range: 0 °C to 70 °C ambient rating for applications within this temperature envelope.

Why Choose AS4C16M16SA-7BCN?

The AS4C16M16SA-7BCN provides a straightforward, specification-driven SDRAM option for designs requiring 256 Mbit of parallel volatile memory in a 16M × 16 organization. Its documented timing (5.4 ns access, 14 ns write cycle) and clock rating (143 MHz) allow engineers to plan memory subsystem performance precisely.

This device is suited for board- and module-level implementations that need a compact 54‑TFBGA package and standard 3.0–3.6 V operation across a 0 °C to 70 °C ambient range, offering a clear set of electrical and mechanical parameters for integration and qualification.

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