AS4C16M16SA-6TIN
| Part Description |
IC DRAM 256MBIT PAR 54TSOP II |
|---|---|
| Quantity | 1,223 Available (as of May 6, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Alliance Memory, Inc. |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 8 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Mbit | Access Time | 5 ns | Grade | Industrial | ||
| Clock Frequency | 166 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | 12 ns | Packaging | 54-TSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 16M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0024 |
Overview of IC DRAM 256MBIT PAR 54TSOP II – 256 Mbit SDRAM, 16M × 16, 54‑TSOP II
The AS4C16M16SA-6TIN from Alliance Memory, Inc. is a 256 Mbit volatile SDRAM organized as 16M × 16 with a parallel memory interface. It delivers DRAM storage in a 54‑lead TSOP II package optimized for compact board layouts.
Designed for systems operating from 3.0 V to 3.6 V and across an ambient temperature range of -40°C to 85°C, this device provides a balance of accessible density, timing performance and small-package integration for a range of electronic designs.
Key Features
- Memory Type & Organization 256 Mbit SDRAM organized as 16M × 16, providing parallel DRAM storage in a single device.
- Performance Supports a clock frequency of 166 MHz with a specified access time of 5 ns for responsive memory operations.
- Timing Write cycle time (word/page) specified at 12 ns to support burst and page write operations.
- Power Operates from 3.0 V to 3.6 V supply voltage, suitable for 3 V systems.
- Package 54‑lead TSOP (0.400", 10.16 mm width) in a 54‑TSOP II supplier device package for space-constrained PCB layouts.
- Interface Parallel memory interface for direct connection to parallel memory controllers.
- Operating Range Rated for ambient temperatures from -40°C to 85°C (TA).
- Volatile Memory DRAM format; data is volatile and requires periodic refresh during operation.
- Compliance Note RoHS status is not specified in the provided product data.
Unique Advantages
- Compact TSOP II footprint: 54‑lead TSOP (10.16 mm width) enables higher memory density in space-limited designs.
- Parallel SDRAM organization: 16M × 16 arrangement simplifies integration where parallel DRAM interfaces are used.
- Fast access characteristics: 5 ns access time and 166 MHz clock frequency support responsive memory access for performance-sensitive tasks.
- Robust operating range: Specified operation from -40°C to 85°C and 3.0 V–3.6 V supply voltage supports a variety of industrial and commercial environments.
- Predictable write timing: 12 ns write cycle time (word/page) provides clearly specified timing for write operations and system timing design.
Why Choose IC DRAM 256MBIT PAR 54TSOP II?
The AS4C16M16SA-6TIN offers a straightforward SDRAM solution when a 256 Mbit parallel DRAM with defined timing and voltage characteristics is required. Its combination of 16M × 16 organization, 166 MHz clock support and 5 ns access time make it suitable for designs that require moderate-density volatile storage in a compact TSOP II package.
This device is appropriate for engineers and procurement teams specifying 3 V SDRAM parts that must operate across a wide ambient temperature range and fit constrained PCB footprints, providing deterministic timing parameters for integration into memory subsystems.
Request a quote or contact sales for pricing and availability of the AS4C16M16SA-6TIN.
