AS4C16M32MD1B-5BINTR

IC DRAM 512MBIT PARALLEL 90FBGA
Part Description

IC DRAM 512MBIT PARALLEL 90FBGA

Quantity 1,208 Available (as of May 6, 2026)
Product CategoryMemory
ManufacturerAlliance Memory, Inc.
Manufacturing StatusActive
Manufacturer Standard Lead Time24 Weeks
Datasheet

Specifications & Environmental

Device Package90-FBGA (8x13)Memory FormatDRAMTechnologySDRAM - DDR
Memory Size512 MbitAccess Time5 nsGradeIndustrial
Clock Frequency200 MHzVoltage1.7V ~ 1.95VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word Page15 nsPackaging90-VFBGA
Mounting MethodVolatileMemory InterfaceLVCMOSMemory Organization16M x 32
Moisture Sensitivity LevelN/ARoHS ComplianceUnknownREACH ComplianceREACH Unknown
QualificationN/AECCNN/AHTS CodeN/A

Overview of AS4C16M32MD1B-5BINTR - 512Mbit LPDDR1 SDRAM

The AS4C16M32MD1B-5BINTR is a 512Mbit low power double data rate synchronous DRAM featuring a 16M x 32 memory organization and 200MHz clock frequency operation. Manufactured by Alliance Memory, Inc., this LPDDR1 memory device delivers reliable performance for mobile and power-constrained applications that require efficient memory solutions with extended temperature range support.

Key Features

  • High-Density LPDDR1 Architecture - 512Mbit capacity organized as 16M x 32, providing substantial memory resources in a compact footprint for mobile and embedded systems.
  • DDR Synchronous Operation - 200MHz clock frequency with 5ns access time enables efficient double data rate transfers for improved bandwidth compared to traditional single data rate memories.
  • Low Voltage Operation - 1.7V to 1.95V supply voltage range reduces power consumption, making it ideal for battery-powered devices and thermally sensitive applications.
  • LVCMOS Interface - Standard LVCMOS signaling simplifies integration with common microcontrollers and processors while maintaining signal integrity.
  • Industrial Temperature Range - -40°C to 85°C operating range ensures reliable operation in challenging environmental conditions beyond consumer-grade specifications.
  • Compact 90-FBGA Package - Space-efficient 8x13mm fine-pitch ball grid array package optimizes board space utilization in size-constrained designs.

Typical Applications

  • Mobile Computing Devices - This LPDDR1 SDRAM provides working memory for tablets, portable terminals, and handheld devices where low power consumption extends battery life and the compact package reduces overall device size.
  • Industrial Control Systems - The extended temperature range and reliable operation make this memory suitable for PLCs, industrial computers, and automation equipment deployed in factory environments with temperature extremes.
  • Automotive Infotainment - Provides buffer memory for navigation systems, displays, and entertainment modules where the industrial temperature rating supports in-cabin electronics operating across wide ambient conditions.
  • Portable Medical Equipment - Supports data buffering in battery-powered diagnostic devices and monitoring equipment where low voltage operation conserves power and enables longer untethered operation.
  • Communication Infrastructure - Functions as working memory in routers, switches, and network equipment where the industrial temperature range accommodates outdoor or uncontrolled environment deployments.

Unique Advantages

  • Power Efficiency for Extended Battery Life: Low voltage operation and LPDDR architecture reduce power consumption compared to standard DDR memories, enabling longer runtime in portable applications.
  • Industrial-Grade Reliability: Extended temperature range qualification supports deployment in harsh environments without requiring additional thermal management components.
  • Space-Optimized Integration: Compact 90-FBGA package reduces PCB footprint, allowing designers to minimize board size or allocate space for additional functionality.
  • Active Lifecycle Status: Current production availability ensures long-term supply continuity for designs with extended product lifecycles.
  • Standard Interface Compatibility: LVCMOS interface enables straightforward integration with existing processor and controller platforms without specialized level shifters.
  • Proven SDRAM Technology: Mature DDR SDRAM architecture provides predictable performance characteristics and broad ecosystem support for faster time-to-market.

Why Choose AS4C16M32MD1B-5BINTR?

The AS4C16M32MD1B-5BINTR addresses the specific requirements of power-conscious and space-constrained embedded designs. With its combination of low voltage operation, industrial temperature range, and compact packaging, this LPDDR1 memory delivers an optimal balance of performance, power efficiency, and environmental robustness. It is particularly well-suited for industrial, automotive, and portable applications where standard consumer-grade memories may not meet operational requirements.

For designs requiring reliable memory with active lifecycle status and proven SDRAM technology, the AS4C16M32MD1B-5BINTR offers a practical solution backed by Alliance Memory's focus on long-term availability and technical support.

Get Started Today

Contact our sales team to request a quote for the AS4C16M32MD1B-5BINTR or to discuss how this LPDDR1 memory can meet your specific application requirements. Our technical support staff can assist with integration guidance and provide additional documentation.

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