AS4C64M8D1-5TCN
| Part Description |
IC DRAM 512MBIT PAR 66TSOP II |
|---|---|
| Quantity | 906 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Alliance Memory, Inc. |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 20 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 66-TSOP II | Memory Format | DRAM | Technology | SDRAM - DDR | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 700 ps | Grade | Commercial | ||
| Clock Frequency | 200 MHz | Voltage | 2.3V ~ 2.7V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | 15 ns | Packaging | 66-TSSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 64M x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0028 |
Overview of AS4C64M8D1-5TCN - 512Mbit DDR SDRAM
The AS4C64M8D1-5TCN is a 512Mbit DDR SDRAM from Alliance Memory, Inc., organized as 64M x 8 and operating at 200MHz clock frequency. This parallel-interface volatile memory device delivers reliable performance for embedded systems requiring fast, cost-effective dynamic RAM solutions. With 7ns access time and a 2.3V to 2.7V supply voltage range, it provides an efficient memory solution for industrial and commercial applications.
Key Features
- Memory Architecture - 512Mbit density organized as 64M x 8, providing flexible word-level access for 8-bit data bus systems.
- DDR Performance - 200MHz clock frequency with 7ns access time and 15ns write cycle time, delivering double data rate throughput for demanding applications.
- Power Efficiency - 2.3V to 2.7V supply voltage range optimizes power consumption while maintaining signal integrity and compatibility with standard logic levels.
- Temperature Range - Commercial temperature grade operation from 0°C to 70°C (TA) suits standard industrial and commercial environments.
- Package - 66-TSOP II (10.16mm width) surface-mount package enables high-density board layouts with reliable thermal performance.
- Interface - Parallel memory interface provides direct processor connectivity without requiring complex protocol controllers.
Typical Applications
- Embedded Computing - This DDR SDRAM serves as main memory in embedded processors and microcontrollers where its parallel interface eliminates protocol overhead and its 512Mbit capacity supports moderate application code and data requirements.
- Industrial Control Systems - The component provides working memory for PLCs and automation controllers operating in 0°C to 70°C environments, where its DDR architecture delivers the bandwidth needed for real-time control loops and HMI data buffering.
- Networking Equipment - Routers and switches leverage this SDRAM for packet buffering and routing table storage, benefiting from its fast access times and proven DDR technology in commercial-grade network infrastructure.
- Point-of-Sale Terminals - POS systems and payment terminals use this memory for transaction processing and display buffering, where its commercial temperature range and compact TSOP package suit space-constrained retail environments.
- Test and Measurement - Instrumentation designs incorporate this DDR SDRAM for waveform capture and data logging applications that require moderate memory depth with fast read/write cycles.
Unique Advantages
- Proven DDR Technology: Mature SDRAM architecture reduces design risk and ensures long-term component availability for multi-year production runs.
- Standard Footprint Compatibility: Industry-standard 66-TSOP II package enables drop-in replacement options and simplifies PCB layout with established design rules.
- Simplified Integration: Parallel interface eliminates the need for complex memory controllers required by serial protocols, reducing BOM cost and firmware complexity.
- Wide Voltage Tolerance: 2.3V to 2.7V range accommodates supply variations and supports designs with 2.5V nominal rails common in mixed-signal systems.
- Cost-Effective Capacity: 512Mbit density provides sufficient memory for many embedded applications without the cost premium of larger densities.
- Active Lifecycle Status: Current production availability supports new designs and long-term procurement planning for commercial and industrial products.
Why Choose AS4C64M8D1-5TCN?
The AS4C64M8D1-5TCN represents a reliable memory solution for embedded systems requiring proven DDR SDRAM performance in a standard commercial temperature range. Its combination of 512Mbit capacity, 200MHz operation, and parallel interface makes it well-suited for cost-sensitive designs where DDR bandwidth is needed but extreme environmental specifications are not required. The 66-TSOP II package and active lifecycle status support both new product development and ongoing production requirements.
This DRAM component is ideal for embedded computing platforms, industrial controls, networking equipment, and commercial instrumentation where designers need predictable performance, straightforward integration, and long-term component availability. Alliance Memory's focus on memory solutions ensures consistent supply and technical support for production designs.
Get a Quote
Contact our sales team to request pricing and availability for the AS4C64M8D1-5TCN. Our technical support staff can assist with design integration, timing analysis, and volume procurement planning for your embedded system project.