EN25E40A-104XFIP(2A)
| Part Description |
4 Mbit SPI NOR Flash, Industrial 8‑pin USON |
|---|---|
| Quantity | 470 Available (as of May 5, 2026) |
Specifications & Environmental
| Device Package | 8-pin USON 2x3mm | Memory Format | NOR Flash | Technology | SPI NOR Flash | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 4 Mbit | Access Time | 8 ns | Grade | Industrial | ||
| Clock Frequency | 104 MHz | Voltage | 2.5V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C – 85°C | Write Cycle Time Word Page | 3 ms | Packaging | 8-pin USON 2x3mm | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 512K x 8 | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.00.71 |
Overview of EN25E40A-104XFIP(2A) – 4 Mbit SPI NOR Flash, Industrial 8‑pin USON
The EN25E40A-104XFIP(2A) is a 4 M-bit serial SPI NOR Flash memory device in the ESMT EN25E40A(2A) series. It provides a uniform-sector architecture and supports high-speed SPI and Dual SPI operation for code and data storage in embedded systems.
Designed for industrial environments, the device combines a 104 MHz clock capability, low-power modes, and an 8‑pin USON 2×3 mm surface‑mount package, making it suitable for compact, temperature‑sensitive designs requiring non‑volatile program and data storage.
Key Features
- Memory Capacity & Organization — 4 M‑bit total capacity (4.194 Mbit / 512 K‑byte) organized as 2,048 pages with 256 bytes per programmable page.
- High‑speed SPI Interface — Standard SPI compatible with Mode 0 and Mode 3 at up to 104 MHz; Dual SPI supports equivalent 208 MHz operation using two data lines.
- Uniform Sector Architecture — 128 sectors of 4 KB, 16 blocks of 32 KB and 8 blocks of 64 KB allow granular erase and program operations.
- Program & Erase Performance — Typical page program time 0.6 ms; typical sector erase time 50 ms; typical 32 KB block erase 150 ms and 64 KB block erase 300 ms; typical chip erase 2.5 s.
- Low Power — Typical active current 5 mA and typical power‑down current 1 µA for energy‑sensitive designs.
- Write Protection — Software and hardware write protection options including WP# pin and software‑protected regions.
- Endurance & Retention — Minimum 100 K program/erase cycles per sector and typical data retention of 20 years.
- Supply & Temperature — Nominal supply noted at 2.5 V; device datasheet lists full operating voltage range 2.3–3.6 V. Industrial operating temperature from −40 °C to 85 °C.
- Package & Mounting — 8‑contact USON 2×3×0.45 mm surface‑mount package (also available in SOP and WLCSP variants per series datasheet).
Typical Applications
- Embedded Code Storage — Store bootloaders, firmware images, and lookup tables in space‑constrained microcontroller designs.
- Industrial Control — Non‑volatile configuration and firmware storage across −40 °C to 85 °C operating range.
- Consumer & IoT Devices — Compact SPI NOR memory for firmware, calibration data, and local non‑volatile storage.
Unique Advantages
- High SPI Throughput: 104 MHz clock and Dual SPI support enable faster code fetch and data transfers without changing host architecture.
- Granular Erase Flexibility: Uniform 4 KB sectors plus 32 KB and 64 KB block options let you optimize erase size for wear leveling and update efficiency.
- Low Standby Power: Typical 1 µA power‑down current conserves energy in battery‑powered or always‑on systems.
- Robust Endurance and Retention: 100 K program/erase cycles and 20‑year data retention provide long service life for fielded products.
- Hardware & Software Protection: WP# pin and software protection modes simplify secure updates and write control across the memory map.
- Compact Industrial Package: 8‑pin USON 2×3 mm SMD package supports small PCBs while meeting industrial temperature requirements.
Why Choose EN25E40A-104XFIP(2A)?
The EN25E40A-104XFIP(2A) is positioned for designs that require a compact, industrial‑grade serial NOR Flash with flexible erase granularity, solid endurance, and efficient power consumption. Its 104 MHz SPI performance and Dual SPI capability allow faster access for code execute‑in‑place and high‑speed data transfers while maintaining low active and standby currents.
This device is well suited to embedded, industrial, and compact consumer applications where footprint, temperature range, data retention, and reliable firmware update mechanisms are important. The combination of granular sector architecture, software/hardware protection, and proven endurance provides a durable, long‑term non‑volatile storage option.
Request a quote or submit a pricing request to obtain availability and volume pricing for the EN25E40A-104XFIP(2A).
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