EN35QX512A-133YIP(2SC)

512Mb SPI NOR Flash Ind.
Part Description

512 Mbit SPI NOR Flash, Industrial WSON

Quantity 1,110 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerESMT
Manufacturing StatusMP
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package8-pin WSON 8x6mmMemory FormatDRAMTechnologySPI NOR Flash
Memory Size512 MbitAccess Time8 nsGradeIndustrial
Clock Frequency133 MHzVoltage2.5VMemory TypeNon-Volatile
Operating Temperature-40°C – 85°CWrite Cycle Time Word Page500 µsPackaging8-pin WSON 8x6mm
Mounting MethodSurface MountMemory InterfaceParallelMemory Organization64M x 8
Moisture Sensitivity Level3RoHS ComplianceCompliantREACH ComplianceREACH Unknown
QualificationN/AECCNEAR99HTS Code8542.32.00.71

Overview of EN35QX512A-133YIP(2SC) – 512 Mbit SPI NOR Flash, Industrial WSON

The EN35QX512A-133YIP(2SC) from ESMT is a 512 M-bit serial SPI NOR Flash memory device designed for industrial embedded applications. It provides a high-density, non-volatile storage solution with a serial SPI architecture supporting Standard, Dual and Quad I/O.

With Quad I/O Fast Read at up to 133 MHz, a uniform 4-Kbyte sector architecture, and industrial temperature operation from -40 °C to 85 °C, this device is suited to firmware/boot storage, field updates and secure configuration storage where performance, endurance and long-term data retention are required.

Key Features

  • Capacity & Organization 512 M-bit (65,536 KByte) total capacity; organized as 64M × 8 with 262,144 pages and 256 bytes per programmable page.
  • Serial SPI Interface & Modes SPI-compatible interface supporting Mode 0 and Mode 3. Standard, Dual and Quad SPI I/O are supported (CLK, CS#, DI/DO and DQ₂/DQ₃ pins).
  • High-speed Read Performance Quad I/O Fast Read operation up to 133 MHz (104 MHz supported for Single/Dual/Quad Fast Read at lower supply range), enabling higher throughput for code and data reads.
  • Voltage & Power Single-supply operation across 2.7–3.6 V. Low power characteristics with typical active current ~14 mA and typical power-down current ~2 μA.
  • Program/Erase & Endurance Fast program/erase performance with typical page program time ~0.5 ms, sector erase ~40 ms, and chip erase ~120 s. Minimum 100K program/erase cycles per sector and 20-year data retention.
  • Uniform Sector Architecture Flexible erase granularity with 16,384 sectors of 4-Kbyte, 2,048 blocks of 32-Kbyte and 1,024 blocks of 64-Kbyte—any sector or block can be erased individually.
  • Protection & Security Hardware and software write-protect features, software-configurable protection of all or part of memory, lockable 3×512-byte OTP security sector, and Read Unique ID support.
  • Package & Temperature Available in an industrial-grade 8-contact WSON package (8 × 6 mm) and specified for operation from -40 °C to 85 °C. RoHS-compliant packaging.

Typical Applications

  • Firmware and Boot Storage Non-volatile storage for system boot code and firmware images, with sector protection to safeguard critical code sections during updates.
  • Field Upgradeable Systems Supports page program and individual sector/block erase operations enabling reliable in-field firmware patches and updates.
  • Data Storage and Logging Large capacity and 4-Kbyte sector granularity accommodate data segments and logging where non-volatile retention is required.
  • Device Identity and Configuration Read Unique ID and lockable OTP sector provide persistent device identity and secure configuration storage.

Unique Advantages

  • High-throughput Quad I/O: Quad I/O Fast Read at up to 133 MHz improves read performance for code execution and large data transfers.
  • Flexible SPI Modes: Standard, Dual and Quad SPI support enables interface scalability across different host controllers and performance needs.
  • Fine-grained Erase Architecture: Uniform 4-Kbyte sectors and multiple block sizes simplify firmware patching and selective data updates.
  • Durable Storage: Minimum 100K program/erase cycles per sector and 20-year data retention support long-life deployments.
  • Low Power Standby: Typical power-down current of ~2 μA helps reduce system standby power.
  • Industrial-ready Packaging: WSON 8×6 mm packaging and -40 °C to 85 °C operating range meet industrial environment requirements.

Why Choose EN35QX512A-133YIP(2SC)?

The EN35QX512A-133YIP(2SC) balances high-capacity non-volatile storage with flexible SPI interface options and high-speed Quad I/O reads, making it suitable for embedded designs that require reliable firmware storage, in-field update capability and sustained endurance. Its uniform sector architecture and hardware/software protection features reduce development complexity for safe updates and secure data segments.

Targeted at industrial-grade applications, this device offers a combination of performance, low-power standby, and long-term data retention—delivering a practical, scalable flash memory option backed by ESMT’s SPI NOR feature set.

Request a quote or submit an inquiry today to check pricing, availability and technical support for EN35QX512A-133YIP(2SC).

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