EN35QX512A-133YIP(2SC)
| Part Description |
512 Mbit SPI NOR Flash, Industrial WSON |
|---|---|
| Quantity | 1,110 Available (as of May 5, 2026) |
Specifications & Environmental
| Device Package | 8-pin WSON 8x6mm | Memory Format | DRAM | Technology | SPI NOR Flash | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 8 ns | Grade | Industrial | ||
| Clock Frequency | 133 MHz | Voltage | 2.5V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C – 85°C | Write Cycle Time Word Page | 500 µs | Packaging | 8-pin WSON 8x6mm | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 64M x 8 | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.00.71 |
Overview of EN35QX512A-133YIP(2SC) – 512 Mbit SPI NOR Flash, Industrial WSON
The EN35QX512A-133YIP(2SC) from ESMT is a 512 M-bit serial SPI NOR Flash memory device designed for industrial embedded applications. It provides a high-density, non-volatile storage solution with a serial SPI architecture supporting Standard, Dual and Quad I/O.
With Quad I/O Fast Read at up to 133 MHz, a uniform 4-Kbyte sector architecture, and industrial temperature operation from -40 °C to 85 °C, this device is suited to firmware/boot storage, field updates and secure configuration storage where performance, endurance and long-term data retention are required.
Key Features
- Capacity & Organization 512 M-bit (65,536 KByte) total capacity; organized as 64M × 8 with 262,144 pages and 256 bytes per programmable page.
- Serial SPI Interface & Modes SPI-compatible interface supporting Mode 0 and Mode 3. Standard, Dual and Quad SPI I/O are supported (CLK, CS#, DI/DO and DQ₂/DQ₃ pins).
- High-speed Read Performance Quad I/O Fast Read operation up to 133 MHz (104 MHz supported for Single/Dual/Quad Fast Read at lower supply range), enabling higher throughput for code and data reads.
- Voltage & Power Single-supply operation across 2.7–3.6 V. Low power characteristics with typical active current ~14 mA and typical power-down current ~2 μA.
- Program/Erase & Endurance Fast program/erase performance with typical page program time ~0.5 ms, sector erase ~40 ms, and chip erase ~120 s. Minimum 100K program/erase cycles per sector and 20-year data retention.
- Uniform Sector Architecture Flexible erase granularity with 16,384 sectors of 4-Kbyte, 2,048 blocks of 32-Kbyte and 1,024 blocks of 64-Kbyte—any sector or block can be erased individually.
- Protection & Security Hardware and software write-protect features, software-configurable protection of all or part of memory, lockable 3×512-byte OTP security sector, and Read Unique ID support.
- Package & Temperature Available in an industrial-grade 8-contact WSON package (8 × 6 mm) and specified for operation from -40 °C to 85 °C. RoHS-compliant packaging.
Typical Applications
- Firmware and Boot Storage Non-volatile storage for system boot code and firmware images, with sector protection to safeguard critical code sections during updates.
- Field Upgradeable Systems Supports page program and individual sector/block erase operations enabling reliable in-field firmware patches and updates.
- Data Storage and Logging Large capacity and 4-Kbyte sector granularity accommodate data segments and logging where non-volatile retention is required.
- Device Identity and Configuration Read Unique ID and lockable OTP sector provide persistent device identity and secure configuration storage.
Unique Advantages
- High-throughput Quad I/O: Quad I/O Fast Read at up to 133 MHz improves read performance for code execution and large data transfers.
- Flexible SPI Modes: Standard, Dual and Quad SPI support enables interface scalability across different host controllers and performance needs.
- Fine-grained Erase Architecture: Uniform 4-Kbyte sectors and multiple block sizes simplify firmware patching and selective data updates.
- Durable Storage: Minimum 100K program/erase cycles per sector and 20-year data retention support long-life deployments.
- Low Power Standby: Typical power-down current of ~2 μA helps reduce system standby power.
- Industrial-ready Packaging: WSON 8×6 mm packaging and -40 °C to 85 °C operating range meet industrial environment requirements.
Why Choose EN35QX512A-133YIP(2SC)?
The EN35QX512A-133YIP(2SC) balances high-capacity non-volatile storage with flexible SPI interface options and high-speed Quad I/O reads, making it suitable for embedded designs that require reliable firmware storage, in-field update capability and sustained endurance. Its uniform sector architecture and hardware/software protection features reduce development complexity for safe updates and secure data segments.
Targeted at industrial-grade applications, this device offers a combination of performance, low-power standby, and long-term data retention—delivering a practical, scalable flash memory option backed by ESMT’s SPI NOR feature set.
Request a quote or submit an inquiry today to check pricing, availability and technical support for EN35QX512A-133YIP(2SC).
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