IS42S32400B-7BI

The IS42S32400B-7BI is a 128Mbit synchronous DRAM organized as 4M × 32 with a quad-bank, pipeline architecture for high-speed, burst-oriented memory access. It provides a parallel LVTTL interface and is designed for 3.3V memory systems.

This device targets systems that require compact, synchronous parallel DRAM with programmable burst operation, selectable CAS latency, and support for industry temperature ranges up to 85°C.

Key Features

• Core & Architecture Quad-bank SDRAM organized as 4,096 rows × 256 columns × 32 bits per bank (4M × 32). Fully synchronous operation with all signals referenced to the positive clock edge.
• Memory Density & Organization 128 Mbit total capacity presented as 4M × 32.
• Performance & Timing Designed for a -7 speed grade with a clock frequency up to 143 MHz and an access time of 5.4 ns (CAS latency = 3). Programmable CAS latency options of 2 or 3 clocks are supported.
• Burst & Transfer Modes Programmable burst length (1, 2, 4, 8, full page) and selectable burst sequence (sequential or interleave). Supports burst read/write and burst read/single write operations with burst termination commands.
• Refresh & Power-Saving Auto Refresh and Self Refresh modes with programmable refresh periods; 4096 refresh cycles every 64 ms. Includes power-down mode for reduced standby power.
• Interface & Signaling LVTTL-compatible inputs/outputs with a parallel memory interface for synchronous, clocked operation.
• Supply Voltage Operates with supply rails in the 3.0 V to 3.6 V range (nominal 3.3 V per device specification).
• Package & Temperature Available in a 90-ball TFBGA (8 × 13) package; specified operating temperature range −40 °C to +85 °C and offered in industrial temperature grades.
• Manufacturing & Compliance Options Device documentation notes availability in lead-free package options.

Typical Applications

• High-speed memory subsystems — Used where synchronous, burst-oriented DRAM is required for predictable, clocked data transfers.
• 3.3 V system memory — Fits designs that operate with 3.3 V nominal supplies and require parallel SDRAM interfaces.
• Industrial equipment — Industrial temperature availability (−40 °C to +85 °C) makes it suitable for memory functions in industrial electronic systems.
• Board-level integration — Compact 90-TFBGA package supports dense PCB layouts where a small-footprint parallel DRAM is needed.

Unique Advantages

• Programmable burst flexibility: Configurable burst lengths and sequences allow designers to match memory transfer behavior to system throughput and access patterns.
• Synchronous pipeline architecture: All signals registered to the rising clock edge enable predictable timing and high-rate burst transfers.
• Selectable CAS latency: CAS latency options (2 or 3) provide trade-offs between frequency and access timing for system tuning.
• Refresh and power modes: Auto Refresh, Self Refresh, and power-down modes offer controlled refresh behavior and lower standby power for system power management.
• Industrial temperature support: Specified operation from −40 °C to +85 °C accommodates deployment in temperature-demanding environments.
• Compact BGA footprint: 90-TFBGA (8 × 13) package reduces board area for dense designs while delivering 128 Mbit capacity.

Why Choose IS42S32400B-7BI?

The IS42S32400B-7BI provides a 128 Mbit synchronous DRAM solution with a quad-bank pipeline architecture, programmable burst modes, and selectable CAS latency to support high-speed, deterministic memory access in 3.3 V systems. Its LVTTL parallel interface and compact 90-TFBGA package make it suitable for board-level integration where space and synchronous performance are important.

With industry-temperature availability and standard SDRAM refresh and power-saving features, this device is appropriate for designers seeking a well-documented, configurable 128 Mbit SDRAM option from Integrated Silicon Solution Inc.

Request a quote or contact sales to obtain pricing, lead time, and availability for the IS42S32400B-7BI.