IS42S32400D-7B
| Part Description |
IC DRAM 128MBIT PAR 90TFBGA |
|---|---|
| Quantity | 1,963 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 90-TFBGA (8x13) | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 128 Mbit | Access Time | 5.4 ns | Grade | Commercial | ||
| Clock Frequency | 143 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 90-TFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 4M x 32 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0002 |
Overview of IS42S32400D-7B – IC DRAM 128MBIT PAR 90TFBGA
The IS42S32400D-7B is a 128 Mbit volatile DRAM device implemented as SDRAM with a parallel memory interface. It is organized as 4M × 32, supports a clock frequency up to 143 MHz and an access time of 5.4 ns, and is supplied in a 90‑TFBGA (8 × 13) package.
This device is intended for systems that require a 128 Mbit parallel SDRAM solution operating from a 3.0 V to 3.6 V supply and within an ambient temperature range of 0°C to 70°C.
Key Features
- Memory Architecture — 128 Mbit DRAM organized as 4M × 32 to support a 32‑bit parallel data path.
- SDRAM Technology — Synchronous DRAM with a parallel memory interface designed for synchronous operation.
- Performance — Specified clock frequency of 143 MHz and an access time of 5.4 ns for timing-sensitive memory subsystems.
- Supply Voltage — Operates from 3.0 V to 3.6 V.
- Package — 90‑TFBGA (8 × 13) BGA package for compact board-level integration.
- Operating Temperature — Rated for ambient operation from 0°C to 70°C (TA).
Typical Applications
- System Memory — Provides 128 Mbit parallel SDRAM capacity for systems requiring a 32‑bit wide memory interface and defined timing characteristics.
- Embedded Platforms — Suited for embedded designs that require a compact 90‑TFBGA SDRAM package and standard 3.0–3.6 V supply operation.
- Consumer Electronics — Applicable to devices operating within 0°C–70°C where a 128 Mbit SDRAM with 5.4 ns access time is required.
Unique Advantages
- 32‑Bit Data Organization: The 4M × 32 arrangement provides a full 32‑bit parallel data path for wider data transfer per cycle.
- Defined Timing Performance: 143 MHz clock frequency and 5.4 ns access time provide clear timing parameters for system integration and memory timing budgets.
- Standard Voltage Compatibility: 3.0 V to 3.6 V supply range aligns with common 3.3 V system rails.
- Space‑Efficient Package: 90‑TFBGA (8 × 13) package reduces board area while offering a BGA mounting option.
- Specified Operating Range: Rated for ambient temperatures from 0°C to 70°C for temperature-controlled environments.
- Backed by ISSI: Manufactured by Integrated Silicon Solution Inc (ISSI), providing traceable supplier information for procurement and sourcing.
Why Choose IC DRAM 128MBIT PAR 90TFBGA?
The IS42S32400D-7B delivers a clear, specification-driven 128 Mbit parallel SDRAM option with a 4M × 32 organization, defined clock and access time parameters, and a compact 90‑TFBGA package. These characteristics make it suitable for designs that require a 32‑bit parallel memory solution with known timing, voltage, and temperature requirements.
This device is well suited to engineers and procurement teams seeking a standardized 3.0–3.6 V SDRAM module from Integrated Silicon Solution Inc. Its documented performance and package details support straightforward integration into memory subsystems where these specific electrical and mechanical parameters are required.
Request a quote or submit an inquiry for the IS42S32400D-7B to receive pricing and availability information.
