IS42S32400B-7TLI

The IS42S32400B-7TLI is a 128‑Mbit synchronous DRAM (SDRAM) organized as 4M × 32 with a quad‑bank, pipelined architecture and a parallel memory interface. It is fully synchronous, with all signals referenced to the rising edge of the clock, and supports LVTTL signaling.

This -7 speed grade supports a clock frequency of 143 MHz with CAS latency options and an access time from clock of 5.4 ns (CAS latency = 3). The device is available in an 86‑pin TSOP‑II package and specified for operation from -40°C to 85°C.

Key Features

• Memory Core and Organization  128‑Mbit SDRAM organized as 4M × 32 with an internal quad‑bank configuration (each bank: 33,554,432 bits arranged as 4,096 rows × 256 columns × 32 bits).
• Performance  -7 speed grade supports 143 MHz clock frequency and programmable CAS latency (2 or 3). Access time from clock is 5.4 ns for CAS latency = 3.
• Burst and Bank Control  Programmable burst lengths (1, 2, 4, 8, full page) and burst sequence (sequential/interleave). Internal bank interleaving and auto precharge support hide row access/precharge delays.
• Refresh and Power Management  Auto Refresh (CBR), Self Refresh with programmable refresh periods, and 4,096 refresh cycles every 64 ms. Power‑down mode is supported.
• Interface and Signaling  Fully synchronous parallel interface with LVTTL compatible inputs and outputs; random column address changes every clock cycle during burst access.
• Power  VDD and VDDQ referenced at 3.3V (product supply range shown as 3.0V–3.6V in device specifications).
• Package and Temperature Range  Available in an 86‑pin TSOP‑II (86‑TFSOP, 0.400", 10.16 mm width) package and specified for operation from -40°C to 85°C. Lead‑free package option is available.

Unique Advantages

• High‑speed synchronous transfers: 143 MHz clock support and programmable CAS latency enable low access time bursts (5.4 ns at CL=3) for demanding timing requirements.
• Quad‑bank architecture to hide latency: Internal banking and interleaving allow precharge operations to be overlapped with accesses to other banks, improving effective throughput.
• Flexible burst control: Programmable burst lengths and sequence modes let designers tailor data bursts to match system access patterns.
• Robust refresh and low‑power options: Auto and self refresh modes plus power‑down provide controlled refresh behavior and power savings during idle periods.
• System‑level compatibility: LVTTL signaling and standard 3.3V supply levels (VDD/VDDQ) simplify interface and voltage domain integration.
• Commercial/Industrial deployment: Compact 86‑pin TSOP‑II footprint with a -40°C to 85°C operating range supports compact, temperature‑tolerant designs.

Why Choose IS42S32400B-7TLI?

The IS42S32400B-7TLI is positioned as a 128‑Mbit synchronous DRAM solution that combines pipelined, quad‑bank architecture with flexible burst and refresh control to support high‑speed, burst‑oriented memory accesses. Its -7 speed grade provides 143 MHz operation and timing characteristics suitable for designs requiring predictable synchronous performance.

With LVTTL interface levels, standard 3.3V supply reference, an industry‑rated temperature range, and a compact 86‑pin TSOP‑II package, this device is suited for applications that need a balance of speed, configurability, and a small board footprint while maintaining programmable refresh and power management capabilities.

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