IS42S32400B-7TL-TR

The IS42S32400B-7TL-TR is a 128‑Mbit synchronous DRAM (SDRAM) organized as 4M × 32 with a quad‑bank internal architecture and pipeline data transfer. It is a fully synchronous, LVTTL‑referenced memory device with all signals registered on the rising edge of the system clock.

This SDRAM is intended for systems requiring parallel SDRAM memory with programmable burst operation, refresh control and high‑speed access characteristics. The device supports multiple clock/frequency and CAS latency options to match a variety of synchronous memory timing requirements.

Key Features

• Memory Core  128 Mbit SDRAM configured as 4,096 rows × 256 columns × 32 bits per bank (4 banks), providing a 4M × 32 organization.
• Performance Options  Supports clock frequencies of 166, 143, 125 and 100 MHz. CAS latency is programmable (2 or 3 clocks); access time from clock is specified as 5.4 ns for CAS latency = 3.
• Burst and Sequencing  Programmable burst lengths (1, 2, 4, 8, full page) and selectable burst sequence (sequential or interleave) for flexible burst read/write behavior.
• Refresh and Power Management  Auto Refresh and Self Refresh modes with programmable refresh periods; 4,096 refresh cycles every 64 ms. Includes power‑down mode for reduced standby power.
• Interface  LVTTL‑compatible inputs/outputs and parallel memory interface with random column addressing every clock cycle.
• Package and Supply  Supplied in an 86‑pin TSOP‑II (86‑TFSOP, 0.400", 10.16 mm width) package. Power supply VDD/VDDQ: 3.0 V to 3.6 V (nominal 3.3 V).
• Timing and Control  Internal bank architecture supports hiding row access/precharge and auto precharge at end of bursts for efficient random access and reduced latency.
• Operating Temperature  Specified operating ambient temperature: 0°C to 70°C (TA). The device family is noted as available in industrial temperature options.

Typical Applications

• System Memory  Use as parallel synchronous DRAM in systems that require 128 Mbit density and programmable burst accesses.
• Memory Subsystems  Integration into memory arrays where LVTTL interface and quad‑bank, burst‑oriented access are needed for throughput and bank interleaving.
• Embedded Platforms  Suitable for embedded designs that require synchronous DRAM with selectable CAS latency and multiple clock-rate support.

Unique Advantages

• Flexible Performance Configurations: Multiple supported clock frequencies (166/143/125/100 MHz) and programmable CAS latency (2 or 3) allow tuning for system timing requirements.
• Efficient Burst Handling: Programmable burst lengths and sequences plus auto precharge enable efficient contiguous and interleaved data transfers with reduced control overhead.
• Power and Refresh Controls: Auto Refresh, Self Refresh and power‑down modes provide built‑in mechanisms to manage refresh cycles and reduce standby power.
• Compact Package Density: 128 Mbit capacity in an 86‑pin TSOP‑II package provides a high‑density memory option for space‑constrained boards.
• Standard LVTTL Interface: LVTTL‑compatible signaling simplifies integration with common logic families and existing parallel memory controllers.

Why Choose IC DRAM 128MBIT PAR 86TSOP II?

The IS42S32400B-7TL-TR provides a synchronous, quad‑bank 128‑Mbit DRAM solution with programmable burst behavior and multiple timing configurations to match a range of system requirements. Its pipeline architecture, LVTTL interface and support for bank interleaving make it suitable where predictable synchronous timing and burst throughput are required.

This device is a practical option for designers seeking a 3.3 V SDRAM in an 86‑pin TSOP‑II package with configurable latency and refresh control. It is ideal for projects that need verifiable timing options, compact package density, and standard parallel interface compatibility.

Request a quote or submit a pricing and availability inquiry to receive further information, lead times and support for integrating IS42S32400B-7TL-TR into your design.