IS42S32400B-7T

The IS42S32400B-7T is a 128‑Mbit synchronous DRAM organized as 4M × 32 with a parallel memory interface. It implements a quad‑bank, fully synchronous pipeline architecture with registered inputs and outputs referenced to the rising edge of CLK.

Designed for systems requiring programmable burst operation and high‑speed synchronous transfers, the device delivers flexible timing (programmable CAS latency and burst lengths), automatic refresh modes, and a compact 86‑pin TSOP‑II package suitable for commercial temperature operation (0°C to 70°C).

Key Features

• Memory Architecture  128 Mbit organized as 4M × 32 with four internal banks to enable interleaving and hide row precharge latency.
• High‑speed Synchronous Operation  Clock frequency (‑7) rating at 143 MHz with fully synchronous signaling and LVTTL compatible inputs/outputs.
• Programmable Timing  Selectable CAS latency (2 or 3 clocks) and programmable burst lengths (1, 2, 4, 8, full page) with sequential or interleave burst sequencing.
• Performance / Access Time  Access time from clock of 5.4 ns at CAS latency = 3 (per device timing tables).
• Refresh and Power Modes  Auto Refresh (including CBR), Self Refresh with programmable refresh periods, and 4096 refresh cycles every 64 ms for data retention management.
• Voltage  Single supply operation within 3.0 V to 3.6 V.
• Package and Mounting  Available in an 86‑pin TSOP‑II (86‑TFSOP, 0.400", 10.16 mm width) package; also offered in alternate package options per device family.
• Manufacturing Options  Device family notes availability in industrial temperature ranges and lead‑free variants (per datasheet options).

Typical Applications

• High‑speed data buffering  Use where synchronous burst transfers and random column access are needed for short latency buffering and streaming.
• System memory expansion  Parallel SDRAM capacity for designs that require 128 Mbit memory organized as 4M × 32 with programmable burst behavior.
• Embedded and commercial electronics  Commercial temperature (0°C to 70°C) systems benefiting from low‑latency, burst‑oriented DRAM access and LVTTL signaling.

Unique Advantages

• Flexible timing configuration: Programmable CAS latency and burst lengths let designers tune latency and throughput to match system timing requirements.
• Quad‑bank interleaving: Internal bank architecture enables precharging of one bank while accessing another to reduce effective access gaps.
• Comprehensive refresh control: Auto Refresh, Self Refresh and 4096 refresh cycles every 64 ms provide deterministic retention management for synchronous systems.
• Compact board footprint: 86‑pin TSOP‑II package (10.16 mm width) offers a dense solution for space‑constrained PCB layouts.
• Voltage compatibility: 3.0 V to 3.6 V supply range supports common 3.3 V memory system rails.

Why Choose IS42S32400B-7T?

The IS42S32400B-7T combines a 128‑Mbit SDRAM organization with programmable timing and banked architecture to deliver flexible, high‑speed synchronous memory for commercial systems. Its LVTTL interface, selectable CAS latency, and programmable burst options let engineers optimize latency and throughput for a range of burst‑oriented memory tasks.

With support for automatic and self refresh, a defined commercial operating temperature range, and compact 86‑pin TSOP‑II packaging, the device is suited to designs that require verified synchronous DRAM behavior, predictable refresh management, and a small PCB footprint.

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