IS42S32400D-6B

IC DRAM 128MBIT PAR 90TFBGA
Part Description

IC DRAM 128MBIT PAR 90TFBGA

Quantity 1,907 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package90-TFBGA (8x13)Memory FormatDRAMTechnologySDRAM
Memory Size128 MbitAccess Time5.4 nsGradeCommercial
Clock Frequency166 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word PageN/APackaging90-TFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization4M x 32
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of IS42S32400D-6B – IC DRAM 128MBIT PAR 90TFBGA

The IS42S32400D-6B is a 128 Mbit volatile DRAM device implemented in SDRAM technology with a parallel interface. It is organized as 4M × 32 bits and is supplied in a 90‑TFBGA (8×13) package.

Designed for systems that require parallel SDRAM capacity and defined commercial operating conditions, the device delivers specified timing and supply ranges suitable for a variety of commercial and consumer electronic designs.

Key Features

  • Memory Type & Architecture SDRAM technology; volatile DRAM organized as 4M × 32 for a total of 128 Mbit capacity.
  • Performance Supports operation at a clock frequency of 166 MHz with an access time of 5.4 ns, enabling predictable memory timing for parallel data transfers.
  • Interface Parallel memory interface suitable for designs that require wide data buses and synchronous DRAM operation.
  • Power Operates from a supply voltage range of 3.0 V to 3.6 V, matching common commercial 3V SDRAM domains.
  • Package Supplied in a 90‑TFBGA (8×13) package, enabling compact board-level integration.
  • Temperature Range Rated for operation from 0°C to 70°C (TA), suitable for commercial-temperature applications.

Typical Applications

  • Commercial Embedded Systems — Provides 128 Mbit parallel SDRAM storage for memory buffers, program/data storage, and intermediate processing in commercial embedded designs operating within 0°C to 70°C.
  • Consumer Electronics — Serves as system memory where a 4M × 32 organization and 166 MHz clocking meet throughput and latency needs for consumer devices.
  • Digital Systems with Parallel Memory Buses — Fits applications that require a parallel SDRAM interface and a compact 90‑TFBGA package for board-level integration.

Unique Advantages

  • Defined SDRAM Architecture: 4M × 32 organization and SDRAM technology provide a clear, standard memory structure for system designers.
  • Measured Timing Performance: 166 MHz clock frequency and 5.4 ns access time supply explicit timing characteristics for predictable system behavior.
  • Compact Footprint: 90‑TFBGA (8×13) package enables space-efficient placement on densely populated PCBs.
  • Commercial Voltage Compatibility: 3.0 V to 3.6 V supply range aligns with common 3V memory domains used in commercial designs.
  • Commercial Temperature Rating: 0°C to 70°C operating range clarifies suitability for commercial and many consumer environments.

Why Choose IC DRAM 128MBIT PAR 90TFBGA?

The IS42S32400D-6B delivers a straightforward 128 Mbit SDRAM solution with a 4M × 32 organization, specified timing (166 MHz clock, 5.4 ns access) and a compact 90‑TFBGA package. Its defined supply range and commercial temperature rating make it suitable for designs that require predictable SDRAM performance within commercial operating conditions.

This device is appropriate for engineers specifying parallel SDRAM memory capacity and timing for consumer and commercial embedded systems where package density and standard SDRAM architecture are important design criteria.

Request a quote or submit an inquiry to receive pricing and availability for the IS42S32400D-6B.

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