IS42S32400E-6BL

The IS42S32400E-6BL is a 128Mbit synchronous DRAM organized as 4M × 32 with a quad-bank architecture. It provides a parallel SDRAM interface with pipeline operation and fully synchronous signalling referenced to the rising edge of the clock.

Designed for commercial-temperature systems, the device targets applications that require high-speed burst transfers, programmable latency and refresh options while operating from a single 3.3V supply range.

Key Features

• Core / Architecture  Fully synchronous SDRAM with internal bank architecture for hidden row access/precharge; all I/O referenced to the rising clock edge.
• Memory Organization  128 Mbit capacity organized as 4M × 32 with four internal banks to support interleaved and sequential access patterns.
• Performance  Clock frequency support up to 166 MHz (part -6); access time from clock as low as 5.4 ns at CAS latency = 3 and programmable CAS latency of 2 or 3 clocks.
• Burst and Sequencing  Programmable burst lengths (1, 2, 4, 8, full page) and selectable burst sequence (sequential or interleave) for optimized block transfers.
• Refresh and Reliability  Auto-refresh (CBR) and self-refresh support with 4096 refresh cycles; refresh interval options include 16 ms (A2 grade) and 64 ms (commercial/industrial/A1 grades) as provided in device variants.
• Interface & Signalling  LVTTL-compatible interface with random column address capability every clock cycle for efficient column access.
• Power  Single power supply: nominal 3.3 V (specified supply range 3.0 V to 3.6 V).
• Package & Temperature  90-ball TF-BGA (8 × 13) package; commercial operating temperature range 0°C to +70°C (TA).

Typical Applications

• Embedded systems  Parallel SDRAM for microcontroller or processor-based platforms requiring burst memory transfers and configurable latency.
• Consumer electronics  System memory for devices within commercial temperature ranges that need high-rate synchronous DRAM storage.
• Networking and communications  Buffering and packet memory where parallel SDRAM burst reads and writes improve throughput.
• Industrial control  Memory for control systems and instrumentation operating within the commercial temperature specification.

Unique Advantages

• Configurable performance: Programmable CAS latency and selectable burst lengths allow designers to tune throughput and latency to application requirements.
• High-rate synchronous interface: Support for up to 166 MHz clocking and random column access every clock cycle enables efficient high-speed transfers.
• Flexible refresh management: Auto-refresh and self-refresh modes plus multiple refresh interval options accommodate different system refresh requirements.
• Compact BGA package: 90-TFBGA (8×13) package provides a high-density footprint for space-constrained PCBs.
• Single-supply operation: 3.3 V nominal supply simplifies power-rail design for systems using standard 3.3 V memory domains.

Why Choose IS42S32400E-6BL?

The IS42S32400E-6BL combines a synchronous pipeline architecture with programmable burst and latency features to deliver flexible, high-speed parallel memory for commercial-temperature systems. Its 4M × 32 organization and quad-bank structure enable efficient interleaved access and sustained block transfers.

Manufactured by Integrated Silicon Solution, Inc., this 128Mbit SDRAM is suited to designs that require configurable timing, robust refresh options and a compact TF‑BGA package, offering a straightforward memory building block for embedded, consumer and networking applications.

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