IS42S32400E-6TL

The IS42S32400E-6TL is a 128 Mbit synchronous DRAM organized as 4M × 32 with a quad-bank architecture. It implements a pipelined, fully synchronous design with all signals referenced to the positive clock edge for high-speed parallel memory operations.

This device is intended for systems requiring a compact, parallel SDRAM solution with programmable burst and latency options, operating from a single 3.3 V supply in an 86‑pin TSOP II package and a commercial temperature range of 0 °C to 70 °C.

Key Features

• Core / Architecture  Quad-bank, pipelined SDRAM architecture arranged as 1M × 32 × 4 banks to support interleaved and hidden row operations for improved throughput.
• Memory Capacity & Organization  128 Mbit total capacity organized as 4M × 32, suitable for parallel memory subsystems requiring 32‑bit data width.
• Clock & Performance  Support for up to 166 MHz clock frequency (‑6 device) with an access time from clock of 5.4 ns at CAS latency = 3.
• Programmable Burst & Latency  Programmable burst lengths (1, 2, 4, 8, full page) and selectable burst sequence (sequential/interleave); CAS latency programmable to 2 or 3 clocks.
• Refresh & Retention  Auto Refresh (CBR) and Self Refresh supported; 4096 refresh cycles per refresh interval according to device grade options.
• Interface & Signaling  Parallel memory interface with LVTTL-compatible signals for synchronous control referenced to the rising clock edge.
• Power  Single power supply operation at 3.3 V (3.0 V to 3.6 V specified range), simplifying system power rails.
• Package & Temperature  86‑pin TSOP II (10.16 mm width) package; commercial operating temperature range of 0 °C to 70 °C (TA).

Typical Applications

• System memory — Provides 128 Mbit of synchronous parallel DRAM for designs that require a 4M × 32 memory organization and quad‑bank operation.
• Buffering and frame storage — Pipelined, clocked operation and programmable burst modes support high-speed temporary data buffering and throughput-oriented tasks.
• Memory controller validation — Standard SDRAM feature set (LVTTL interface, programmable CAS, auto/self refresh) makes it suitable for testing and validating parallel SDRAM controllers.
• Refresh‑sensitive designs — Auto and self refresh capabilities with configurable refresh cycles support systems that require managed refresh behavior.

Unique Advantages

• High-frequency operation: Supports 166 MHz clocking on the ‑6 device with a 5.4 ns access time (CAS‑3), enabling fast synchronous transfers.
• Flexible timing control: Programmable CAS latency (2/3) and multiple burst length/sequence options allow tuning for controller and system timing requirements.
• Quad-bank pipelining: Internal bank architecture hides row access/precharge latencies to maintain throughput in interleaved access patterns.
• Single-supply integration: Operates from a single 3.3 V supply (3.0–3.6 V range), simplifying power rail design.
• Compact, industry-standard package: 86‑pin TSOP II (10.16 mm width) provides a space-efficient footprint for board-level memory implementations.
• Refresh management: Supports Auto Refresh and Self Refresh with defined refresh cycle counts to ensure data retention across operating conditions.

Why Choose IS42S32400E-6TL?

The IS42S32400E-6TL delivers a compact 128 Mbit synchronous DRAM solution with programmable timing, burst control and a quad‑bank pipelined architecture to support high-speed parallel memory designs. Its 166 MHz capability (for the ‑6 variant), LVTTL interface and single 3.3 V supply make it suitable for systems that need a standardized SDRAM building block with adjustable performance characteristics.

This device is well suited to designers seeking a reliable, easily integrated parallel SDRAM component in an 86‑TSOP II package, offering configurable refresh and latency options to align with system memory controllers and timing budgets.

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