IS42S32400E-7BL

IC DRAM 128MBIT PAR 90TFBGA
Part Description

IC DRAM 128MBIT PAR 90TFBGA

Quantity 1,352 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package90-TFBGA (8x13)Memory FormatDRAMTechnologySDRAM
Memory Size128 MbitAccess Time5.4 nsGradeCommercial
Clock Frequency143 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word PageN/APackaging90-TFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization4M x 32
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of IS42S32400E-7BL – 128 Mbit SDRAM, 4M × 32, 90‑TFBGA

The IS42S32400E-7BL is a 128 Mbit synchronous DRAM organized as 4M × 32 with four internal banks and pipeline architecture. It operates as a parallel SDRAM with signals referenced to the rising edge of the clock and supports a single 3.3 V power supply range.

Designed for systems that require compact, high‑speed parallel memory, this device delivers programmable burst operation, selectable CAS latency, and refresh modes suitable for commercial temperature designs (0 °C to +70 °C).

Key Features

  • Core / Memory Organization  128 Mbit SDRAM configured as 1M × 32 × 4 banks (4M × 32 overall) for 32‑bit data paths and internal bank management.
  • Synchronous, Pipeline Architecture  Fully synchronous operation with all inputs and outputs referenced to the positive clock edge for predictable timing and pipelined data transfer.
  • Performance / Timing  Clock frequency options include 166, 143 and 133 MHz; the –7 speed grade provides 143 MHz operation and CAS latency options of 2 or 3. Access time from clock for CAS‑3 is 5.4 ns.
  • Burst & Latency Control  Programmable burst lengths (1, 2, 4, 8, full page) and programmable burst sequence (sequential/interleave) with burst termination via burst stop or precharge commands.
  • Refresh and Low‑Power Modes  Supports auto refresh (CBR) and self‑refresh; 4096 refresh cycles with timing options (16 ms for A2 grade or 64 ms for commercial/other grades as defined in the datasheet).
  • Interface & Logic Levels  LVTTL interface and parallel memory interface for direct connection to 3.3 V logic systems.
  • Power Supply  Single power supply operation at 3.3 V (specified in data as 3.3 V ±0.3 V; device data lists allowable 3.0 V to 3.6 V).
  • Package & Mounting  90‑ball TF‑BGA (8 × 13) package for compact board footprint and surface‑mount assembly; commercial operating temperature range of 0 °C to +70 °C.

Typical Applications

  • Embedded systems memory  Provides 128 Mbit of parallel SDRAM for embedded platforms requiring a 32‑bit data interface and synchronous timing.
  • Data buffering  Programmable burst lengths and burst sequencing make the device suitable for high‑throughput buffering and temporary storage in digital subsystems.
  • System controllers and peripherals  LVTTL interface and 3.3 V single‑supply operation simplify integration with 3.3 V controller cores and peripheral logic.

Unique Advantages

  • Configurable performance  Selectable CAS latency (2 or 3) and multiple clock frequency grades let designers balance latency and throughput for target use cases.
  • Flexible burst operation  Programmable burst lengths and sequence modes enable efficient block transfers and optimized memory access patterns.
  • Single 3.3 V supply  Standard 3.3 V operation (3.0 V–3.6 V range) reduces power‑domain complexity in 3.3 V systems.
  • Compact BGA package  90‑ball TF‑BGA (8×13) minimizes PCB area while supporting surface‑mount assembly processes.
  • Predictable synchronous timing  Fully synchronous design and pipeline architecture provide deterministic timing referenced to the clock rising edge.
  • Refresh and power management  Auto and self‑refresh options with documented refresh intervals offer control over data retention and power behavior.

Why Choose IS42S32400E-7BL?

The IS42S32400E-7BL delivers 128 Mbit of parallel synchronous DRAM in a compact 90‑TFBGA package with programmable latency and burst features for flexible system integration. Its single 3.3 V supply, LVTTL interface, and pipeline architecture make it suitable for designs that need deterministic, high‑speed memory with standard commercial temperature operation.

This device is well suited to engineers building systems that require a 32‑bit SDRAM interface, configurable performance (clock and CAS latency), and compact board‑level implementation. The documented refresh, timing and interface options support predictable behavior across the stated commercial operating range.

Request a quote or submit a specification request to obtain pricing and availability for the IS42S32400E-7BL. Our team can provide further technical details and support for integration into your design.

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