IS42S32400E-7TL

The IS42S32400E-7TL is a 128 Mbit synchronous DRAM device from ISSI (Integrated Silicon Solution Inc.) organized as 4M × 32 with a quad-bank, pipeline architecture. It is fully synchronous—All input and output signals are referenced to the rising edge of the clock—and is designed for high-speed parallel memory applications requiring a 3.3 V single-supply memory solution.

This –7 speed grade supports a 143 MHz clock and offers programmable timing and burst options to match system performance and timing requirements in commercial-temperature designs.

Key Features

• Core / Architecture Quad-bank, pipeline SDRAM internally configured as 4M × 32 to deliver 128 Mbit of volatile memory with fully synchronous operation (signals referenced to clock rising edge).
• Performance –7 speed grade supports a 143 MHz clock frequency with an access time from clock of 5.4 ns at CAS latency = 3; CAS latency is programmable (2 or 3 clocks).
• Burst and Access Modes Programmable burst length (1, 2, 4, 8, full page) and burst sequence (sequential/interleave); supports burst read/write and burst read/single write with burst termination options.
• Refresh and Power Single power supply operation at 3.0 V to 3.6 V (3.3 V ±0.3 V); supports Auto Refresh and Self Refresh with 4096 refresh cycles per 64 ms for commercial grade.
• Interface Parallel memory interface with LVTTL-compatible signaling and random column address every clock cycle for continuous data access patterns.
• Package and Temperature Supplied in an 86-pin TSOP-II (86-TFSOP, 0.400", 10.16 mm width) package and specified for commercial operating temperature range 0°C to +70°C.

Typical Applications

• High-speed buffering and data transfer Parallel SDRAM for systems that require synchronous memory access at up to 143 MHz with programmable CAS and burst controls.
• System memory expansion 128 Mbit density and 4M × 32 organization provide compact expansion options for embedded systems and controllers needing parallel DRAM.
• 3.3 V memory subsystems Designed for single-supply 3.0–3.6 V environments using LVTTL signaling to integrate with standard memory buses and controllers.

Unique Advantages

• Deterministic synchronous timing Fully synchronous design with clock-referenced I/O provides predictable timing behavior for hardware designers.
• Flexible performance tuning Programmable CAS latency and burst length/sequence allow designers to balance latency and throughput for target workloads.
• Internal bank architecture Quad-bank organization hides row access/precharge latency and enables efficient pipelined access patterns.
• Commercial temperature rating Rated for 0°C to +70°C, matching standard commercial system requirements.
• Standard TSOP-II package 86-pin TSOP-II footprint (10.16 mm width) simplifies board-level integration in space-constrained designs.
• Single-supply compatibility Operates from 3.0 V to 3.6 V (3.3 V nominal), easing integration into common 3.3 V memory subsystems.

Why Choose IC DRAM 128MBIT PAR 86TSOP II?

The IS42S32400E-7TL combines a standard 86-TSOP II footprint with a 128 Mbit, 4M × 32 quad-bank SDRAM architecture to deliver a compact, fully synchronous memory option for commercial 3.3 V systems. Its programmable CAS latency, burst modes, and internal bank management provide designers with the timing flexibility needed for a range of parallel memory applications.

This device is suitable for designs that require predictable synchronous timing, configurable burst behavior, and a compact package for board-level integration. Manufactured by ISSI, it provides a clear specification set for engineering evaluation and system integration in commercial-temperature environments.