IS42S32400E-7TLI

The IS42S32400E-7TLI is a 128 Mbit synchronous DRAM organized as 4M × 32 with a quad-bank internal architecture and pipeline operation. It delivers parallel SDRAM memory in an 86-pin TSOP-II package for systems that require a 3.3 V single-supply, LVTTL interface and up to 143 MHz operation.

Designed for high-speed, fully synchronous operation with programmable burst control, this device is suited for designs that require deterministic clocked memory access and standard SDRAM command sets (refresh, auto/precharge, burst operations).

Key Features

• Core / Architecture Quad-bank synchronous DRAM with pipeline architecture; all inputs and outputs are referenced to the rising edge of the clock.
• Memory Organization 128 Mbit capacity organized as 4M × 32 (1M × 32 × 4 banks), supporting random column address every clock cycle.
• Performance & Timing Clock frequency option for this grade: 143 MHz (CAS latency = 3) with typical access time from clock of 5.4 ns at CL=3. Programmable CAS latency (2 or 3 clocks).
• Burst & Refresh Programmable burst length (1, 2, 4, 8, full page) and burst sequence (sequential/interleave). Supports Auto Refresh, Self Refresh and 4096 refresh cycles per refresh interval as specified by device grade.
• Interface & Logic Levels LVTTL-compatible interface with standard SDRAM command set for burst read/write and burst read/single write operations, and burst termination by stop or precharge command.
• Power Single power supply: 3.3 V ±0.3 V (nominal operating range 3.0 V to 3.6 V).
• Package 86-pin TSOP-II (86-TFSOP, 0.400" / 10.16 mm width) surface-mount package (supplier device package: 86-TSOP II).
• Operating Temperature Industrial-grade operating temperature range: −40°C to +85°C (TA).

Typical Applications

• Embedded system memory — Provides a 128 Mbit parallel SDRAM option for designs requiring a 3.3 V single-supply, LVTTL interface and deterministic synchronous operation.
• Board-level DRAM expansion — Suitable as a parallel SDRAM device for systems needing burst read/write capability and programmable burst lengths.
• High-speed buffering — Used where pipeline architecture and fast CAS timing (CL=3, 5.4 ns access from clock) support burst-oriented data transfers.

Unique Advantages

• Deterministic synchronous timing: All signals are referenced to a positive clock edge, simplifying timing closure in clocked systems.
• Flexible burst control: Programmable burst lengths and sequence modes enable tailored throughput and access patterns for system requirements.
• Compact TSOP-II package: 86-pin TSOP-II footprint provides a high-density parallel memory option with a 10.16 mm width.
• Industrial temperature support: Rated for −40°C to +85°C ambient operation for demanding temperature environments.
• Standard SDRAM command set: Auto Refresh, Self Refresh, and programmable CAS latency support common memory management schemes across designs.

Why Choose IS42S32400E-7TLI?

The IS42S32400E-7TLI combines a 128 Mbit SDRAM organization with a fully synchronous, pipelined architecture and programmable burst features to meet the needs of systems requiring predictable, clocked parallel memory. With a 3.3 V single-supply interface, LVTTL logic levels, and an 86-pin TSOP-II package, it integrates into boards that require a compact, industry-temperature-rated SDRAM solution.

This device is appropriate for designs that demand configurable burst behavior, standard SDRAM refresh and timing options (CAS latency 2 or 3), and reliable operation across −40°C to +85°C. Its specification set supports scalable memory subsystems where parallel SDRAM is required and where deterministic timing and standard SDRAM command support are important.

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