IS42S32400E-7TL-TR

The IS42S32400E-7TL-TR is a 128 Mbit synchronous DRAM organized as 4M × 32 with a quad-bank architecture and pipeline operation. It is designed for 3.3 V memory systems and uses fully synchronous operation with all signals referenced to the rising clock edge.

This device targets systems requiring a 128 Mb SDRAM in a compact 86-pin TSOP-II package, offering programmable burst and latency options alongside standard SDRAM refresh and power characteristics.

Key Features

• Memory Core — 128 Mbit capacity organized as 1M × 32 × 4 banks (4M × 32 logical organization), providing quad-bank operation for improved row access handling.
• Synchronous SDRAM — Fully synchronous operation with pipeline architecture; all I/O referenced to the positive clock edge for deterministic timing.
• Performance — Rated for 143 MHz clock frequency (–7 speed grade) with an access time from clock of 5.4 ns at CAS latency = 3.
• Programmability — Programmable burst length (1, 2, 4, 8, full page), programmable burst sequence (sequential/interleave), and programmable CAS latency (2 or 3 clocks).
• Refresh and Power — Auto Refresh (CBR) and Self Refresh supported; 4096 refresh cycles with refresh interval depending on device grade. Single power supply operation around 3.3 V (3.0 V to 3.6 V specified).
• Interface — LVTTL-compatible signaling and parallel memory interface suitable for synchronous memory subsystems.
• Package & Temperature — 86-pin TSOP-II (0.400", 10.16 mm width) package; commercial operating temperature range 0°C to +70°C.

Typical Applications

• 3.3 V Memory Subsystems — Provides 128 Mb of synchronous DRAM for systems designed around a 3.3 V memory bus.
• Embedded and Board-Level Designs — Compact 86-pin TSOP-II package fits space-constrained PCBs requiring parallel SDRAM.
• Data Buffering — Programmable burst and latency options support burst read/write and burst read/single write operations for buffering and streaming data use cases.

Unique Advantages

• Deterministic synchronous timing: Fully synchronous, pipeline architecture with signals referenced to the rising clock edge simplifies timing implementation.
• Speed-grade matched performance: –7 speed grade delivers 143 MHz operation and a 5.4 ns access time at CAS latency = 3 for predictable throughput.
• Flexible burst and latency control: Programmable burst length, sequence and CAS latency let designers tune transfer behavior to system needs.
• Single-supply operation: 3.0 V to 3.6 V supply range (nominal 3.3 V) reduces power-rail complexity in 3.3 V memory systems.
• Standard package footprint: 86-TSOP II package (10.16 mm width) supports compact board layouts and common assembly processes.
• Built-in refresh management: Auto and self refresh with 4096 refresh cycles accommodate standard SDRAM refresh requirements across device grades.

Why Choose IC DRAM 128MBIT PAR 86TSOP II?

The IS42S32400E-7TL-TR combines a 128 Mbit SDRAM density with a quad-bank, fully synchronous architecture and configurable burst/latency options, making it suitable for designs that require predictable, high-speed SDRAM behavior on a 3.3 V bus. Its –7 speed grade performance, standard LVTTL interface, and compact 86-pin TSOP-II packaging support integration into constrained board-level applications.

Choose this device when you need a verified synchronous DRAM building block with programmable transfer modes, standard refresh options, and a commercial temperature rating for mainstream embedded and system memory applications.

Request a quote or submit a product inquiry to receive pricing, lead-time, and availability information for the IS42S32400E-7TL-TR.