IS42S32400E-7BL-TR

The IS42S32400E-7BL-TR is a 128 Mbit synchronous DRAM organized as 4M × 32 with internal quad-bank architecture and pipeline operation for high-speed data transfer. It is a single-supply 3.3 V SDRAM device available in a 90-ball TF-BGA (8×13) package and specified for commercial temperature operation.

This device is intended for designs requiring a parallel SDRAM interface with programmable burst control, selectable CAS latency and fast access timing, delivering predictable timing for high-performance memory subsystems.

Key Features

• Core Architecture Quad-bank SDRAM with pipeline architecture and internal bank management to hide row access/precharge and support continuous data flow.
• Memory Organization 128 Mbit capacity organized as 4M × 32 (1M × 32 × 4 banks) for parallel bus systems.
• Clock and Timing Clock frequency options of 166, 143, and 133 MHz. The -7 speed grade (this part) is specified at 143 MHz with an access time from clock of 5.4 ns at CAS latency = 3.
• Programmable Burst and CAS Programmable burst lengths (1, 2, 4, 8, full page) and programmable burst sequence (sequential/interleave). CAS latency selectable between 2 and 3 clocks.
• Refresh and Self-Refresh Auto and self-refresh supported. Refresh options include 4096 cycles per refresh interval (A2 grade: 16 ms; Commercial/Industrial/A1 grade: 64 ms) as defined in the device options.
• Interface and Signaling LVTTL-compatible interface with fully synchronous operation where all signals are referenced to the positive clock edge.
• Power Single power supply: 3.3 V ±0.3 V (documented supply range 3.0–3.6 V).
• Package and Temperature 90-TFBGA (8×13) package; commercial operating temperature range 0°C to +70°C (TA).

Typical Applications

• High-speed memory subsystems Used where a parallel 128 Mbit SDRAM is required to provide predictable, clocked data transfers and burst operations.
• Embedded systems Suited for embedded designs that need a 3.3 V synchronous DRAM in a compact TF-BGA package and commercial temperature operation.
• Buffering and data streaming Programmable burst lengths, interleave/sequential modes and quad-bank architecture make it appropriate for buffering and streaming data paths.

Unique Advantages

• Flexible timing configurations Selectable CAS latency (2 or 3) and multiple clock-frequency options enable designers to tune latency and throughput to system requirements.
• Burst programmability Multiple burst lengths and sequence modes allow optimization of sequential and random access patterns to improve data throughput efficiency.
• Banked architecture for throughput Internal quad-bank design and bank-level hiding of row operations reduce effective access penalties during interleaved accesses.
• Compact board footprint 90-ball TF-BGA (8×13) package provides a small form factor for space-constrained PCB layouts.
• Standard 3.3 V supply Single-supply operation at 3.3 V ±0.3 V simplifies power delivery and integration with common 3.3 V system rails.

Why Choose IS42S32400E-7BL-TR?

The IS42S32400E-7BL-TR offers a balanced combination of programmable burst control, selectable CAS latency, and a quad-bank synchronous DRAM architecture to meet demands for predictable, high-speed parallel memory in commercial-temperature designs. Its 90-TFBGA package and 3.3 V single-supply operation make it suitable where board space and standard system voltages are primary considerations.

This device is appropriate for engineers and procurement teams specifying a 128 Mbit SDRAM with configurable timing and refresh options, and for systems that benefit from LVTTL signaling and pipeline synchronous operation.

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